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IRF530NSTRLPBF

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 17A(Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 90mΩ @ 9A,10 Maximum power dissipation (Ta=25°C): 70W (Tc) Type: N channel N channel, 100V, 17A
CategoryDiscrete semiconductor    The transistor   
File Size275KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF530NSTRLPBF Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 17A(Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 90mΩ @ 9A,10 Maximum power dissipation (Ta=25°C): 70W (Tc) Type: N channel N channel, 100V, 17A

IRF530NSTRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID361274
Samacsys Pin Count3
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategoryOther
Samacsys Footprint NameD2PAK
Samacsys Released Date2019-03-09 09:56:12
Is SamacsysN
Other featuresAVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)93 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95100
HEXFET Power MOSFET
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Description
l
IRF530NSPbF
IRF530NLPbF
®
V
DSS
= 100V
R
DS(on)
= 90mΩ
D
G
S
I
D
= 17A
Advanced HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
D
2
Pak
IRF530NSPbF
TO-262
IRF530NLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
‡
Continuous Drain Current, V
GS
@ 10V
‡
Pulsed Drain Current
‡
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
60
3.8
70
0.47
± 20
9.0
7.0
7.4
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
2.15
40
Units
°C/W
www.irf.com
1
03/10/04

IRF530NSTRLPBF Related Products

IRF530NSTRLPBF
Description Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 17A(Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 90mΩ @ 9A,10 Maximum power dissipation (Ta=25°C): 70W (Tc) Type: N channel N channel, 100V, 17A
Is it Rohs certified? conform to
Maker Infineon
package instruction SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN code EAR99
Factory Lead Time 15 weeks
Samacsys Confidence 4
Samacsys Status Released
Samacsys PartID 361274
Samacsys Pin Count 3
Samacsys Part Category MOSFET (N-Channel)
Samacsys Package Category Other
Samacsys Footprint Name D2PAK
Samacsys Released Date 2019-03-09 09:56:12
Is Samacsys N
Other features AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 93 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V
Maximum drain current (ID) 17 A
Maximum drain-source on-resistance 0.09 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 60 A
Certification status Not Qualified
surface mount YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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