PD - 97103B
IRFB4321PbF
Applications
l
Motion Control Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
Hard Switched and High Frequency Circuits
Benefits
l
Low R
DSON
Reduces Losses
l
Low Gate Charge Improves the Switching
Performance
l
Improved Diode Recovery Improves Switching &
EMI Performance
l
30V Gate Voltage Rating Improves Robustness
l
Fully Characterized Avalanche SOA
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
D
150V
12m
:
15m
:
85A
D
G
G
D
S
S
TO-220AB
D
S
G
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
85
c
60
330
350
2.3
±30
120
-55 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.43
–––
62
Units
A
W
W/°C
V
mJ
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
g
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
g
Units
°C/W
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1
12/9/10
IRFB4321PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
150
12
–––
–––
–––
–––
–––
0.8
Conditions
–––
V V
GS
= 0V, I
D
= 250μA
––– mV/°C Reference to 25°C, I
D
= 1mA
15
mΩ V
GS
= 10V, I
D
= 33A
5.0
V V
DS
= V
GS
, I
D
= 250μA
20
μA
V
DS
= 150V, V
GS
= 0V
1.0
mA V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
100
nA V
GS
= 20V
-100
V
GS
= -20V
–––
Ω
f
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
71
24
21
18
60
25
35
4460
390
82
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 25V, I
D
= 50A
I
D
= 50A
V
DS
= 75V
V
GS
= 10V
V
DD
= 98V
I
D
= 50A
R
G
= 2.5Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
ns
f
f
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
85
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
I
D
= 50A
V
R
= 128V,
di/dt = 100A/μs
G
D
A
A
Ãd
330
––– –––
1.3
V
–––
89
130
ns
––– 300 450
nC
–––
6.5
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
S
f
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.095mH
R
G
= 25Ω, I
AS
= 50A, V
GS
=10V. Part not recommended for use
above this value.
Pulse width
≤
400μs; duty cycle
≤
2%.
R
θ
is measured at T
J
approximately 90°C
2
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IRFB4321PbF
1000
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
5.0V
1
5.0V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
10
100
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
3.5
Fig 2.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
ID = 50A
3.0
ID, Drain-to-Source Current
(Α)
VGS = 10V
100
2.5
TJ = 175°C
10
(Normalized)
2.0
1
TJ = 25°C
VDS = 25V
≤
60μs PULSE WIDTH
1.5
1.0
0.1
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
7000
6000
5000
4000
3000
2000
1000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 50A
VDS = 120V
VDS= 75V
VDS= 30V
16
C, Capacitance (pF)
Ciss
12
Coss
8
4
Crss
0
1
10
100
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFB4321PbF
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100μsec
1msec
ISD , Reverse Drain Current (A)
100
TJ = 175°C
10
100
10
10msec
1
TJ = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
90
80
70
ID , Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 8.
Maximum Safe Operating Area
190
LIMITED BY PACKAGE
180
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
170
160
150
140
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
5.0
Fig 10.
Drain-to-Source Breakdown Voltage
500
EAS, Single Pulse Avalanche Energy (mJ)
4.0
400
13A
20A
BOTTOM
50A
TOP
ID
Energy (μJ)
3.0
300
2.0
200
1.0
100
0.0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
4
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IRFB4321PbF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
Ri (°C/W)
τι
(sec)
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
0.085239 0.000052
0.18817 0.00098
0.176912 0.008365
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
Avalanche Current (A)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current vs.Pulsewidth
120
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 50A
80
60
40
20
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
ΔT
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
175
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
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