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DSEI2X161-12P

Description
Rectifier Diode, 1 Phase, 2 Element, 128A, 1200V V(RRM), Silicon, ECOPAC-12
CategoryDiscrete semiconductor    diode   
File Size47KB,1 Pages
ManufacturerIXYS
Environmental Compliance
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DSEI2X161-12P Overview

Rectifier Diode, 1 Phase, 2 Element, 128A, 1200V V(RRM), Silicon, ECOPAC-12

DSEI2X161-12P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionECOPAC-12
Contacts12
Manufacturer packaging codeECOPAC-12
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, SNUBBER DIODE
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X12
Maximum non-repetitive peak forward current1200 A
Number of components2
Phase1
Number of terminals12
Maximum output current128 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time0.04 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DSEI 2x161-12P
Fast Recovery
Epitaxial Diode (FRED)
ECO-PAC 2
Preliminary Data Sheet
A C -1
IK -10
I
FAVM
= 2x128 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
Symbol
I
FRMS
I
FAVM
*
I
FSM
V
RRM
V
1200
Typ
DSEI 2x161-12P
LN -9
V X -18
Conditions
T
VJ
= T
VJM
T
C
= 70°C; rectangular; d = 0.5
T
VJ
= 45°C; V
R
= 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
270
128
1200
1320
1080
1170
7200
7100
5800
5700
-40 ... + 150
150
-40 ... + 125
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
°C
°C
°C
V~
V~
Nm
lb.in.
g
2
Features
2 indpendent FRED in 1 package
Isolation voltage 3600 V~
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
T
VJ
= 125°C; V
R
= 0 V; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
dt
T
VJ
= 45°C; V
R
= 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
Low noise switching
Small and light weight
T
VJ
= 125°C; V
R
= 0 V; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
R
50/60 Hz, RMS
I
ISOL
< 1 mA
Mounting torque
typ.
Conditions
T
VJ
= 25°C; V
R
= V
RRM
T
VJ
= 25°C; V
R
= 0.8
V
RRM
T
VJ
= 125°C; V
R
= 0.8
V
RRM
I
T
= 200 A; T
VJ
= 25°C
For power-loss calculations only
per Diode
per Diode
I
F
= 100 A; -di
F
/d
t
= 200 A/µs; V
R
= 100 V
L
0.05 mH; T
VJ
= 100°C
I
F
= 1 A; -di
F
/d
t
= 400 A/µs;
V
R
= 30 V; T
VJ
= 25°C
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
11.2
11.2
t = 1 min
t=1s
(M4)
2500
3600
1.5-2.0
14-18
20
Characteristic Values
min.
typ. max.
12
3
60
1.9
mA
mA
mA
V
Dimensions in mm
(1 mm = 0,0394")
V
F
V
TO
r
T
R
thJC
R
thCH
I
RM
t
rr
d
S
d
A
a
1.16
V
3 mΩ
0.2
48
0.29 K/W
K/W
A
40
ns
mm
mm
50 m/s
2
135
* I
FAVM
rating includes reverse blocking losses at T
VJM
; V
R
= 0.8 V
RRM
; d = 0.5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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