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SMBJ54CA

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 6.9A Clamping voltage: 87.1V Breakdown voltage (minimum): 60V Reverse shutdown voltage (typ.): 54V VBR=60V, Vc=87.1V, Ipp=6.9A bidirectional
CategoryDiscrete semiconductor    diode   
File Size980KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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SMBJ54CA Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 6.9A Clamping voltage: 87.1V Breakdown voltage (minimum): 60V Reverse shutdown voltage (typ.): 54V VBR=60V, Vc=87.1V, Ipp=6.9A bidirectional

SMBJ54CA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerLittelfuse
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage66.3 V
Minimum breakdown voltage60 V
Breakdown voltage nominal value63.2 V
Maximum clamping voltage87.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage54 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transient Voltage Suppression Diodes
Surface Mount – 600W > SMBJ series
SMBJ Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The SMBJ is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Features
• 600W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1μA
when V
BR
min>12V
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is a
short circuit condition for
current events exceeding
component rating
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Plastic package is
flammability rated V-0 per
UL
-94
• Meet MSL level1, per
J-STD-020, lead-frame
maximun peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2), (Note 5)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only (Note 4)
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
600
5.0
100
3.5/5.0
-65 to 150
-65 to 175
20
100
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F
< 3.5V for single die parts and V
F
< 5.0V for stacked-die parts.
5. The P
PPM
of stacked-die parts is 800W; please contact Littelfuse for details on the
stacked-die components.
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic
applications.
Additional Infomarion
Functional Diagram
®
Bi-directional
Datasheet
Anode
Resources
Samples
Cathode
Uni-directional
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/17
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