SMBJ64A datasheet, PDF - EEWORLD Datasheet

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SMBJ64A: Description极性：Unidirectional 峰值脉冲电流（10/1000us）：5.9A 箝位电压：103V 击穿电压（最小值）：71.1V 反向关断电压（典型值）：64V VR=64V,Vc=103V,Ipp=5.9A 单向; CategoryDiscrete semiconductor diode; File Size980KB，6 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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SMBJ64A Overview

极性：Unidirectional 峰值脉冲电流（10/1000us）：5.9A 箝位电压：103V 击穿电压（最小值）：71.1V 反向关断电压（典型值）：64V VR=64V,Vc=103V,Ipp=5.9A 单向

SMBJ64A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Littelfuse
package instruction	R-PDSO-C2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	78.6 V
Minimum breakdown voltage	71.1 V
Breakdown voltage nominal value	74.9 V
Maximum clamping voltage	103 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	64 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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Transient Voltage Suppression Diodes

Surface Mount – 600W > SMBJ series

SMBJ Series

Uni-directional

Bi-directional

Description

RoHS

The SMBJ is designed specifically to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Features

• 600W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I

less than 1μA

when V

min>12V

• For surface mounted

applications to optimize

board space

• Low profile package

• Typical failure mode is a

short circuit condition for

current events exceeding

component rating

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Built-in strain relief

• Fast response time:

typically less than 1.0ps

from 0V to BV min

• High temperature

to reflow soldering

guaranteed: 260°C/40sec

• V

@ T

= V

@25°C

x (1+

T x (T

- 25))

(

T:Temperature

Coefficient, typical value

is 0.1%)

• Plastic package is

flammability rated V-0 per

-94

• Meet MSL level1, per

J-STD-020, lead-frame

maximun peak of 260

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

finish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings and Thermal Characteristics

=25

C unless otherwise noted)

Parameter

Peak Pulse Power Dissipation at

=25ºC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2), (Note 5)

Power Dissipation on Infinite Heat

Sink at T

=50

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

Maximum Instantaneous Forward

Voltage at 50A for Unidirectional

Only (Note 4)

Operating Temperature Range

Storage Temperature Range

Typical Thermal Resistance Junction

to Lead

Typical Thermal Resistance Junction

to Ambient

Symbol

PPM

FSM

STG

θJL

θJA

Value

600

5.0

100

3.5/5.0

-65 to 150

-65 to 175

100

Unit

°C

°C/W

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated above T

(initial) =25

C per Fig. 3.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

4. V

< 3.5V for single die parts and V

< 5.0V for stacked-die parts.

5. The P

PPM

of stacked-die parts is 800W; please contact Littelfuse for details on the

stacked-die components.

Applications

TVS devices are ideal for the protection of I/O Interfaces,

bus and other vulnerable circuits used in Telecom,

Computer, Industrial and Consumer electronic

applications.

Additional Infomarion

Functional Diagram

Bi-directional

Datasheet

Anode

Resources

Samples

Cathode

Uni-directional

Specifications are subject to change without notice.

Revised: 06/07/17

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