Operating Temperature Range ......................... -40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range ............................ -60°C to +150°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Information
PACKAGE TYPE: 8 NARROW SOIC
Package Code
Outline Number
Land Pattern Number
THERMAL RESISTANCE, FOUR-LAYER BOARD
Junction to Ambient (θ
JA
)
Junction to Case (θ
JC
)
106.54°C/W
44.91°C/W
S8MS+23
21-0041
90-0096
For the latest package outline information and land patterns (footprints), go to
www.maximintegrated.com/packages.
Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board.
For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
DC Electrical Characteristics
(V
DDA
- V
GNDA
= 5V, V
DDB
- V
SSB
= 20V, V
GNDA
= V
SSB
= 0V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
POWER SUPPLY
V
DDA
Supply Voltage
V
DDB
V
SSB
Differential Supply
Undervoltage-Lockout
Threshold
Undervoltage-Lockout
Threshold Hysteresis
V
DIFF
V
UVLOAP
V
UVLOAN
V
UVLOA_HYST
Relative to GNDA
Relative to GNDB, MAX22700
Relative to V
SSB
, MAX22701
Relative to V
SSB
, MAX22702
Relative to GNDB, MAX22700
V
DDB
- V
SSB
, MAX22700
V
DDA
rising
V
DDA
falling
3
13
13
6
-16
13
2.69
2.59
2.82
2.72
100
5.5
36
36
36
0
36
2.95
2.85
V
V
mV
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
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Maxim Integrated
│
2
MAX22700D–MAX22702D
MAX22700E–MAX22702E
DC Electrical Characteristics (continued)
Ultra-High CMTI
Isolated Gate Drivers
(V
DDA
- V
GNDA
= 5V, V
DDB
- V
SSB
= 20V, V
GNDA
= V
SSB
= 0V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
V
UVLOBP
V
UVLOBN
Undervoltage-Lockout
Threshold
V
UVLOBP
V
UVLOBN
V
UVLOBP
V
UVLOBN
Undervoltage-Lockout
Threshold Hysteresis
SUPPLY CURRENT
A-Side Quiescent
Supply Current
A-Side Active Supply Current
B-Side Quiescent
Positive Supply Current
B-Side Active
Positive Supply Current
LOGIC INTERFACE (INP, INN, IN,
EN)
Input High Voltage
Input Low Voltage
Input Hysteresis
Input Pullup Current (Note 3)
Input Pulldown Current (Note 3)
Input Capacitance
ADJ (MAX22702 ONLY)
Input Leakage Current
GATE DRIVER
High-Side Transistor
On-Resistance
Low-Side Transistor
On-Resistance
R
DSON_H
R
DSON_L
I
OUT
= -100mA (Note 3)
I
OUT
= 100mA
(Note 3)
MAX22700/MAX22702
MAX22701
4.7
1.25
2.5
Ω
Ω
Ω
I
ADJ
V
DDB
- V
ADJ
= 3V
-100
100
nA
B-Side Ground Current
I
DDA
I
DDA
I
DDB
I
DDB
I
GNDB
V
DDA
= 5V, INN/EN = V
DDA
V
DDA
= 3.3V, INN/EN = V
DDA
V
DDA
= 5V, f
PWM
= 1MHz
V
DDA
= 3.3V, f
PWM
= 1MHz
INN/EN = V
DDA
f
PWM
= 1MHz (Note 2)
MAX22700
-25
0.7 x
V
DDA
0.3 x
V
DDA
0.1 x
V
DDA
INN,
EN
INP, IN
f
PWM
= 1MHz
-10
1.5
-5
5
2
-1.5
10
5
3
5
3
3.5
6
6.5
4
6.5
4
6
10
mA
mA
mA
mA
µA
V
UVLOB_HYST
CONDITIONS
V
DDB
rising, relative to GNDB, MAX22700
V
DDB
falling, relative to GNDB, MAX22700
V
DDB
rising, relative to V
SSB
, MAX22701
V
DDB
falling, relative to V
SSB
, MAX22701
V
DDB
rising, relative to ADJ, MAX22702
V
DDB
falling, relative to ADJ, MAX22702
MAX22700, MAX22701
MAX22702
1.79
11.6
11.6
MIN
TYP
13
12
13
12
2
1.84
1
0.16
V
2.05
13.3
V
MAX
13.3
UNITS
V
IH
V
IL
V
HYS
I
PU
I
PD
C
IN
V
V
mV
µA
µA
pF
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Maxim Integrated
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3
MAX22700D–MAX22702D
MAX22700E–MAX22702E
DC Electrical Characteristics (continued)
Ultra-High CMTI
Isolated Gate Drivers
(V
DDA
- V
GNDA
= 5V, V
DDB
- V
SSB
= 20V, V
GNDA
= V
SSB
= 0V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Output-Voltage High
Output-Voltage Low
High-Side Transistor
Peak Output Current
Low-Side Transistor
Peak Output Current
Active Pulldown Voltage
MILLER CLAMP (MAX22701 ONLY)
Miller Clamp Transistor
On-Resistance
Miller Clamp Threshold
Miller Clamp Turn-On Time
THERMAL SHUTDOWN
Thermal-Shutdown Threshold
Thermal-Shutdown Hysteresis
T
SHDN
T
SHDN_HYS
160
25
°C
°C
R
DSON_CLMP
V
TH_CLMP
t
ON
See
Figure 4
I
CLAMP
= 100mA (Note 3)
1.7
2
20
2.5
2.3
Ω
V
ns
SYMBOL
V
OH
V
OL
I
OH
I
OL
V
OUTSD
CONDITIONS
I
OUT
= -10mA (Note 3)
I
OUT
= 10mA
(Note 3)
MAX22700/MAX22702
MAX22701
2.35
3.7
1.9
MIN
TYP
19.95
0.01
0.02
4
5.7
2.85
2.2
MAX
UNITS
V
V
A
A
V
C
L
= 10nF, f
PWM
= 1kHz (Note 2)
C
L
= 10nF,
f
PWM
= 1kHz
(Note 2)
MAX22700/MAX22702
MAX22701
I
OUT
= 150mA (Note 3)
Dynamic Characteristics
(V
DDA
- V
GNDA
= 5V, V
DDB
- V
SSB
= 20V, V
GNDA
= V
SSB
= 0V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Common-Mode Transient Immunity
Minimum Pulse Width
Maximum PWM Frequency
SYMBOL
CMTI
PW
MIN
f
PWM
t
PLH
Propagation Delay
(Figure
3)
t
PHL
C
L
= 200pF,
output is not
connected to
CLAMP pin
(MAX22701)
(Note 4)
T
A
= +25°C to +125°C
T
A
= +25°C
T
A
= -40°C to +25°C
T
A
= +25°C to +125°C
T
A
= +25°C
T
A
= -40°C to +25°C
T
A
= +25°C
T
A
= -40°C to +125°C,
parts at the same
temperature
(Note 5)
C
L
= 200pF
1
34
34
31
34
34
31
35
35
39
36
36
39
36
36
2
5
ns
ns
CONDITIONS
MIN
TYP
300
20
MAX
UNITS
kV/µs
ns
MHz
Part-to-Part Propagation Delay
Matching (Figure
3)
t
PM
C
L
= 200pF
(Note 4)
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Maxim Integrated
│
4
MAX22700D–MAX22702D
MAX22700E–MAX22702E
Dynamic Characteristics (continued)
Ultra-High CMTI
Isolated Gate Drivers
(V
DDA
- V
GNDA
= 5V, V
DDB
- V
SSB
= 20V, V
GNDA
= V
SSB
= 0V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Pulse Width Distortion
Peak Eye Diagram Jitter
Rise Time
(Figure
3)
Fall Time
(Figure
3)
SYMBOL
PWD
T
JIT(PK)
t
R
CONDITIONS
C
L
= 200pF, |t
PLH
- t
PHL
|
1MHz square wave, C
L
= 200pF
C
L
= 200pF, 20% to 80% (Note 2)
C
L
= 200pF,
80% to 20%
(Note 2)
MAX22700/
MAX22702
MAX22701
60
3.6
1.8
2.5
MIN
TYP
MAX
2
UNITS
ns
ps
ns
ns
ns
t
F
Note 1:
All devices are 100% production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design and char-
acterization.
Note 2:
Not production tested. Guaranteed by design and characterization.
Note 3:
All currents into the device are positive. All currents out of the device are negative. All voltages are referenced to their
respective ground (GNDA or VSSB), unless otherwise noted.
Note 4:
Propagation delay is measured from 50% of the input to 2V at the output.
Note 5:
CMTI is the maximum sustainable common-mode voltage slew rate while maintaining the correct output. CMTI applies to
both rising and falling common-mode voltage edges. CMTI is tested with the transient generator connected between GNDA
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