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DTC143TE-TP

Description
Rated power: 150mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN
CategoryDiscrete semiconductor    triode   
File Size822KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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DTC143TE-TP Overview

Rated power: 150mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN

DTC143TE-TP Parametric

Parameter NameAttribute value
rated power150mW
Collector current Ic100mA
Collector-emitter breakdown voltage Vce50V
Transistor typeNPN
DTC143TE
Features
Built-In Bias Resistors Enable
the
Configuration
of an
Inverter
Circuit Without Connecting External Input Resistors
The Bias Resistors Consist
of
Thin-Film Resistors With Complete
Isolation
to
Allow Negative Biasing
of the
Input. They Also Have
the
Advantage
of
Almost Completely Eliminating Parasitic Effects
Only
the
On/Off Conditions Need
to
Be Set For Operation, Making
Device Design Easy
Halogen Free Available Upon Request By Adding Suffix "-HF"
Moisture Sensitivity Level 1
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant.See Ordering Information)
NPN
Digital Transistor
SOT-523
A
3
Maximum Ratings @ 25°C Unless Otherwise
Specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuou
s
Collector Dissipation
Junction Temperature
Storage Temperature Range
Device Marking:03
Internal Structure
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Value
50
50
5
100
150
150
-55 to +150
Unit
V
V
mA
mA
mW
DIM
A
B
C
D
E
G
H
J
K
G
K
F
1
D
B C
2
1:Base
2:Emitter
3:Collcetor
E
H
J
C
R1
B
DIMENSIONS
INCHES
MM
MIN MAX MIN MAX
0.059 0.067 1.50 1.70
0.030 0.033 0.75 0.85
0.057 0.069 1.45 1.75
0.020
0.50
0.035 0.043 0.90 1.10
0.000 0.004 0.00 0.10
0.028 0.031 0.70 0.80
0.004 0.008 0.10 0.20
0.006
0.014
0.15
0.35
NOTE
TYP.
Suggested Solder Pad Layout
E
B:Base
C:Collcetor
E:Emitter
Rev.3-1-01012019
1/4
MCCSEMI.COM

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