EEWORLDEEWORLDEEWORLD

Part Number

Search

DTC114TE-TP

Description
Rated power: 150mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - pre-biased
CategoryDiscrete semiconductor    triode   
File Size228KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric Compare View All

DTC114TE-TP Online Shopping

Suppliers Part Number Price MOQ In stock  
DTC114TE-TP - - View Buy Now

DTC114TE-TP Overview

Rated power: 150mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - pre-biased

DTC114TE-TP Parametric

Parameter NameAttribute value
rated power150mW
Collector current Ic100mA
Collector-emitter breakdown voltage Vce50V
Transistor typeNPN - Pre-biased
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
DTC114TE
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
device design easy
Halogen
free available upon request by adding suffix "-HF"
NPN Digital Transistor
SOT-523
A
D
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Value
50
50
5
100
150
150
-55~150
Unit
V
V
V
mA
mW
G
3
1
B
2
C
1. Base
2. Emitter
3. Collector
E
H
J
K
Electrical Characteristics
Sym
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
DIMENSIONS
Parameter
Collector-Base Breakdown Voltage
(I
C
=50µA, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=1mA, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=50µA, I
C
=0)
Collector Cut-off Current
(V
CB
=50V, I
E
=0)
Emitter Cut-off Current
(V
EB
=4V, I
C
=0)
DC Current Gain
(V
CE
=5V, I
C
=1mA)
Collector-Emitter Saturation Voltage
(I
C
=10mA, I
B
=1mA)
Input Resistor
Transition Frequency
(V
CE
=10V, I
C
=-5mA, f=100MHz)
Min
50
50
5
---
---
100
---
7
---
Typ
---
---
---
---
---
300
---
10
250
Max
---
---
---
0.5
0.5
600
0.3
13
---
Unit
V
V
V
DIM
A
B
C
D
E
G
H
J
K
µA
µA
---
V
K
MHz
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
NOTE
*Marking: 04
www.mccsemi.com
Revision: B
1 of
3
2013/01/01

DTC114TE-TP Related Products

DTC114TE-TP
Description Rated power: 150mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - pre-biased
rated power 150mW
Collector current Ic 100mA
Collector-emitter breakdown voltage Vce 50V
Transistor type NPN - Pre-biased

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1852  1020  2238  180  1294  38  21  46  4  27 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号