MCP87130
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (R
DS(ON)
)
• Low Total Gate Charge (Q
G
) and Gate-to-Drain
Charge (Q
GD
)
• Low Series Gate Resistance (R
G
)
• Capable of Short Dead-Time Operation
• RoHS Compliant
Description:
The MCP87130 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package as well as a
PDFN
3.3 mm x 3.3 mm
package.
Advanced
packaging and silicon processing technologies allow
the MCP87130 to achieve a low Q
G
for a given R
DS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low R
G
, the low FOM of the MCP87130
allows high efficiency power conversion with reduced
switching and conduction losses.
Applications:
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 5 x 6
PDFN 3.3 x 3.3
S 1
S 2
S 3
G 4
8 D
7 D
6 D
5 D
Product Summary Table:
Unless otherwise indicated, T
A
= +25˚C.
Parameters
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
BV
DSS
V
GS(TH)
R
DS(ON)
Q
G
Q
GD
R
G
25
1.1
—
—
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
Thermal Characteristics
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN
Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN
Note 1:
2:
R
θJX
R
θJC
R
θJX
R
θJC
—
—
—
—
—
—
—
—
73
3.3
58
3.3
°C/W
Note 1
°C/W
Note 2
°C/W
Note 1
°C/W
Note 2
—
—
—
—
1.35
13.8
11.3
5.5
2.6
1.7
—
1.7
16.5
13.5
8
—
—
V
V
mΩ
mΩ
nC
nC
Ω
V
GS
= 0V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 4.5V, I
D
= 10A
V
GS
= 10V, I
D
= 10A
V
DS
= 12.5V, I
D
= 10A,
V
GS
= 4.5V
V
DS
= 12.5V, I
D
= 10A
Sym.
Min.
Typ.
Max.
Units
Conditions
R
θJX
is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. cop-
per. This characteristic is dependent on user’s board design.
R
θJC
is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS20005159B-page 1
MCP87130
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under
“Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
V
DS
.......................................................................+25V
V
GS
........................................................... +10.0V / -8V
I
D,
Continuous ..............................................................
8L 5x6-PDFN ............................. 43A, T
C
= +25°C
8L 3.3x3.3-PDFN ....................... 43A, T
C
= +25°C
P
D
.................................................................................
8L 5x6-PDFN ........................... 2.1W, T
A
= +25°C
8L 3.3x3.3-PDFN .......... ...........1.7W, T
A
= +25°C
T
J
, T
STG
.............................................. -55˚C to +150˚C
E
AS
Avalanche Energy ....................................... 50 mJ
I
D
= 10A, L = 1 mH, R
G
= 25Ω
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C
Parameters
Static Characteristics
Sym.
Min.
Typ.
Max.
Units
Conditions
Drain-to-Source
Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
25
—
—
1.1
—
—
—
—
—
—
1.35
17.3
13.8
11.3
40
400
200
60
5.5
2.6
0.9
0.6
3.7
2.2
5.4
4.2
2.1
1.7
—
1
100
1.7
—
16.5
13.5
—
—
—
—
8
—
—
—
—
—
—
—
—
—
V
µA
nA
V
m
m
m
S
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
V
GS
= 0V, I
D
= 250 µA
V
GS
= 0V, V
DS
= 20V
V
DS
= 0V, V
GS
= 10V/-8V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 3.3V, I
D
= 10A
V
GS
= 4.5V, I
D
= 10A
V
GS
= 10V, I
D
= 10A
V
DS
= 12.5V, I
D
= 10A
V
GS
= 0V, V
DS
= 12.5V, f = 1 MHz
V
GS
= 0V, V
DS
= 12.5V, f = 1 MHz
V
GS
= 0V, V
DS
= 12.5V, f = 1 MHz
V
DS
= 12.5V, I
D
= 10A, V
GS
= 4.5V
V
DS
= 12.5V, I
D
= 10A
V
DS
= 12.5V, I
D
= 10A
V
DS
= 12.5V, I
D
= 10A
V
DS
= 12.5V, V
GS
= 0
V
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 10A, R
G
= 2
V
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 10A, R
G
= 2
V
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 10A, R
G
= 2
V
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 10A, R
G
= 2
Transconductance
Dynamic Characteristics
g
fs
C
ISS
C
OSS
C
RSS
Q
G
Q
GD
Q
GS
Q
G(TH)
Q
OSS
t
d(on)
t
r
t
d(off)
t
f
R
G
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Drain Charge
Gate-to-Source Charge
Gate Charge at V
GS(TH)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Series Gate Resistance
DS20005159B-page 2
2013 Microchip Technology Inc.
MCP87130
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C
Parameters
Diode Characteristics
Sym.
Min.
Typ.
Max.
Units
Conditions
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
Avalanche Characteristics
V
FD
Q
RR
t
rr
E
AS
—
—
—
4.5
0.8
7
9.5
—
1
—
—
—
V
nC
nS
mJ
I
S
= 10A, V
GS
= 0V
I
S
= 10A, di/dt = 300 A/µs
I
S
= 10A, di/dt = 300 A/µs
I
D
= 3A, L = 1 mH,
R
G
= 25
Avalanche Energy
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C
Parameters
Temperature Ranges
Sym.
Min.
Typ.
Max.
Units
Conditions
Operating Junction Temperature Range
Storage Temperature Range
Package Thermal Resistances
T
J
T
A
R
θJX
R
θJC
R
θJX
R
θJC
-55
-55
—
—
—
—
—
—
—
—
—
—
150
150
73
3.3
58
3.3
°C
°C
°C/W
°C/W
°C/W
°C/W
Note 1
Note 2
Note 1
Note 2
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN
Thermal Resistance Junction-to-Case,
8L 3.3x3.3-PDFN
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN
Note 1:
2:
R
θJX
is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
R
θJC
is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS20005159B-page 3
MCP87130
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C.
Normalized On-State Resistance
d
40
V
GS
= 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
I
D
= 10A
V
GS
= 4.5V
I
D
- Drain Current (A)
D
30
V
GS
= 4.5V
20
V
GS
= 3V
10
V
GS
= 2.5V
0
0.0
1.0
2.0
V
DS
- Drain-to-Source Voltage (V)
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
C
- Case Temperature (°C)
FIGURE 2-1:
Characteristics.
40
I
D
- Drain Current (A)
D
V
DS
= 5V
Typical Output
FIGURE 2-4:
vs. Temperature.
V
GS
- Gate-
-to-Source Voltage (V)
10
9
8
7
6
5
4
3
2
1
0
0
2
I
D
= 10A
Normalized On Resistance
30
V
DS
= 5V
V
DS
= 12.5V
20
T
C
= +25°C
10
T
C
= +125°C
T
C
= -55°C
0
1.25
1.5
1.75
2
2.25 2.5 2.75
3
V
GS
- Gate-to-Source Voltage (V)
3.25
4
6
8
Q
G
- Gate Charge (nC)
10
12
FIGURE 2-2:
Characteristics.
R
DS(ON)
- On-S
State Resistance (m )
Typical Transfer
FIGURE 2-5:
Gate Charge.
0.8
Gate-to-Source Voltage vs.
26
24
22
20
18
16
14
12
10
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
T
C
= +25°C
T
C
= +125°C
I
D
= 10A
0.7
C - Ca
apacitance (nF)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
f = 1 MHz
V
GS
= 0V
C
ISS
C
OSS
C
RSS
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
FIGURE 2-3:
Source Voltage.
On Resistance vs. Gate-to-
FIGURE 2-6:
Source Voltage.
Capacitance vs. Drain-to-
DS20005159B-page 4
2013 Microchip Technology Inc.
MCP87130
Note:
Unless otherwise indicated, T
A
= +25°C.
V
GS(TH)
- Gat
te-to-Source Threshold
Voltage (V)
1.7
I
D
= 250 μA
70
I
D
- Drain Current (A)
60
50
40
30
20
10
V
GS
= 4.5V
V
GS
= 10V
1.5
1.3
1.1
0.9
-75 -50 -25 0 25 50 75 100 125 150 175
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
I
SD
- Sourc
ce-to-Drain Current (A)
100
10
1
T
C
= +125°C
T
C
= +25°C
FIGURE 2-10:
Maximum Drain Current vs.
Temperature 5x6-PDFN (MCP87130T-U/MF).
- Normalized Thermal
Impedance
1
0.1
0.1
0.01
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
Z
JA
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
0.001
0.001
0.1
10
t
1
- Pulse Duration (s)
1000
Source-to-Drain Current vs.
FIGURE 2-8:
Source-to-Drain Voltage.
1000
Operation in this range is
limited by RDS(on)
FIGURE 2-11:
Transient Thermal
Impedance 5x6-PDFN (MCP87130T-U/MF).
1000
Operation in this range is
limited by RDS(on)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
10
1
0.1
R
JA
= 58 °C/W
Single Pulse
100
10
1
0.1
R
JA
= 73 °C/W
Single Pulse
1 ms
10 ms
100 ms
1s
DC
1 ms
10 ms
100 ms
1s
DC
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
100
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
100
FIGURE 2-9:
Maximum Safe Operating
Area 5x6-PDFN (MCP87130T-U/MF).
FIGURE 2-12:
Maximum Safe Operating
Area 3.3x3.3-PDFN (MCP87130T-U/LC).
2013 Microchip Technology Inc.
DS20005159B-page 5
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