The DN2530 is a low-threshold, depletion-mode, nor-
mally-on transistor that utilizes an advanced vertical
DMOS structure and a well-proven silicon-gate manu-
facturing process. This combination produces a device
with the power-handling capabilities of bipolar transis-
tors, plus the high-input impedance and positive-tem-
perature
coefficient
inherent
in
Metal-Oxide
Semiconductor (MOS) devices. Characteristic of all
MOS structures, this device is free from thermal run-
away and thermally-induced secondary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where high breakdown-voltage, high-input
impedance, low-input capacitance, and fast switching
speeds are desired.
Applications
•
•
•
•
•
•
•
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Package Types
DRAIN
DRAIN
SOURCE
SOURCE
DRAIN
GATE
GATE
TO-92
See
Table 2-1
for pin information
TO-243AA (SOT-89)
2016 Microchip Technology Inc.
DS20005451A-page 1
DN2530
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
†
Drain-to-source voltage ......................................................................................................................................... BV
Operating and Storage Temperature .......................................................................................................... -55 to 150 °C
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, for all specifications T
A
= +25°C
Parameter
Drain-to-source breakdown voltage
Gate-to-source off voltage
V
GS(OFF)
change with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
AC Parameters
(Note
2)
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode Parameters
Diode forward voltage drop
Reverse recovery time
V
SD
t
rr
–
–
–
600
1.8
–
V
ns
V
GS
= -10V, I
SD
= 150 mA
(Note
1)
V
GS
= -10V, I
SD
= 1.0A (Note
2)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
30
5
10
15
15
20
ns
V
DD
= 25V,
I
D
= 150 mA,
R
GEN
= 25Ω,
pF
mmho V
DS
= 10V, I
D
= 150 mA
V
GS
= -10V,
V
DS
= 25V,
f = 1 MHz
Symbol
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
∆R
DS(ON)
Min
300
-1.0
-
-
-
-
200
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
-
-3.5
-4.5
100
10
1.0
-
12
1.1
Units Conditions
V
V
V
GS
= -5.0V, I
D
= 100 µA
V
DS
= 25V, I
D
= 10 µA
DC Parameters
(Note
1,
unless otherwise stated)
mV/°C V
DS
= 25V, I
D
= 10 µA(Note
2)
nA
V
GS
= ±20V, V
DS
= 0V
µA
mA
mA
Ω
%/°C
V
DS
= Max rating, V
GS
= -10V
V
DS
= 0.8 Max Rating,
V
GS
= -10V, T
A
= 125°C (Note
2)
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 150 mA
V
GS
= 0V, I
D
= 150 mA(Note
2)
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested.
DS20005451A-page 2
2016 Microchip Technology Inc.
DN2530
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Unless otherwise specified, for all specifications T
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