CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL
GRM188F11H104ZA01_ (0603, F, 0.1uF, 50Vdc)
_: packaging code
1.Scope
Reference Sheet
This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.
2.MURATA Part NO. System
(Ex.)
GRM
18
(1)L/W
Dimensions
8
(2)T
Dimensions
F1
(3)Temperature
Characteristics
1H
(4)DC Rated
Voltage
104
Z
A01
D
(5)Nominal (6)Capacitance
Tolerance
Capacitance
(7)Murata’s (8)Packaging
Code
Control Code
3. Type & Dimensions
L
W
T
e
g
e
(1)-1 L
1.6±0.1
(1)-2 W
0.8±0.1
(2) T
0.8±0.1
e
0.2 to 0.5
(Unit:mm)
g
0.5 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):F(JIS)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
DC Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operationg
Temp. Range)
-80 to 30 %
-25 to 85 °C
(20 °C)
50 Vdc
0.1 uF
+80/-20 %
-25 to 85 °C
5.Package
mark
D
J
(8) Packaging
f180mm
Reel
PAPER W8P4
f330mm
Reel
PAPER W8P4
Packaging Unit
4000 pcs./Reel
10000 pcs./Reel
Product specifications in this catalog are as of Jan.26,2013,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GRM188F11H104ZA01-01
1
■SPECIFICATIONS
AND TEST METHODS
No
Item
Specification
Temperature
High Dielectric
Compensating Type
Constant Type
△C,1X：－55℃
to 125℃ B1,B3,F1：－25℃ to 85℃
0C：－55℃ to 150℃
R1,R7,C7：－55℃ to 125℃
Other
：－25℃
to 85℃
R6：－55℃ to 85℃
R9,L8：－55℃ to 150℃
C8：－55℃ to 105℃
F5：－30℃ to 85℃
See the previous pages.
Test Method
Standard Temperature：20℃
(R6,R7,R9,C7,C8,F5,L8：25℃）
1 Operating
Temperature Range
2 Rated Voltage
The rated voltage is defined as the maximum voltage which may be
applied continuously to the capacitor.
When AC voltage is superimposed on DC voltage, V
P-P
or V
O-P
,
whichever is larger, should be maintained within the rated voltage range.
Visual inspection.
Using calipers. (GRM02 size is based on Microscope)
No failure should be observed when 300% of the rated voltage
(temperature compensating type) or 250% of the rated voltage
(high dielectric constant type) is applied between the
terminations for 1 to 5 seconds, provided the charge/discharge
current is less than 50mA.
The insulation resistance should be measured with a DC voltage
not exceeding the rated voltage at 20℃/25℃ and 75%RH max.
and within 2 minutes of charging, provided the charge/discharge
current is less than 50mA.
The capacitance/D.F. should be measured at 20℃/25℃ at the
frequency and voltage shown in the table.
3 Appearance
4 Dimension
5 Dielectric Strength
No defects or abnormalities.
Within the specified dimensions.
No defects or abnormalities.
6 Insulation
Resistance
C≦0.047μ F:More than 10000MΩ
C＞0.047μ F:More than 500Ω·F
C:Nominal Capacitance
7
Capacitance
8 Q/Dissipation
Factor (D.F.)
Within the specified tolerance.
30pF and over:Q≧1000
［B1,B3,R1,R6,R7,C7,C8,L8½
30pF and below:Q≧400+20C W.V.:100V :0.025max.(C＜0.068mF)
(1)Temperature Compensating Type
:0.05max.(C≧0.068mF)
Capacitance
Frequency
Voltage
C:Nominal Capacitance(pF) W.V.:50V/25V :0.025max.
C≦
1000pF
1±0.1MHz
0.5 to 5Vrms
W.V.:16V/10V :0.035max.
C＞1000pF
1±0.1kHz
1±0.2Vrms
W.V.:6.3V/4V :0.05max.(C＜3.3mF)
:0.1max.(C≧3.3mF)
[R9]
(2)High Dielectric Constant Type
W.V.:50V: 0.05max.
[F1,F5]
Capacitance
Frequency
Voltage
W.V.:25Vmin
C≦
10μF
1±0.1kHz
1±0.2Vrms
:0.05max. (C＜0.1mF)
C＞10μF
120±24Hz
0.5±0.1Vrms
:0.09max.(C≧0.1mF)
W.V.:16V/10V:0.125max.
W.V.:6.3V:0.15max.
B1,B3 : Within ±10%
9
Capacitance
No bias Within the specified
The capacitance change should be measured after 5min. at each
Temperature
(-25°C to +85°C)
specified temp.stage.
tolerance.(Table A)
Characteristics
R1,R7 : Within ±15%
(1)Temperature Compensating Type
(-55°C to +125°C)
The temperature coefficient is determind using the capacitance
R6 : Within ±15%
measured in step 3 as a reference.
(-55°C to +85°C)
When cycling the temperature sequentially from step 1 through
R9 : Within ±15%
5 (Δ C：+20℃ to +125℃：other temp.coeffs.:+20℃ to +85℃) the
(-55°C to +150°C)
capacitance should be within the specified tolerance for the
C7 : Within ±22%
temperature coefficient and capacitance change as Table A-1.
(-55°C to +125°C)
The capacitance drift is caluculated by dividing the differences
C8 : Within ±22%
between the maximum and minimum measured values in the
(-55°C to +105°C)
step 1,3 and 5 by the cap.value in step 3.
F1 : Within +30/-80%
Step
Temperature(C)
(-25°C to +85°C)
1
20±2
F5 :Within +22/-82%
2
-55±3(for
C)/-25±3(for
other TC)
(-30°C to +85°C)
3
20±2
L8 : Within ±15%
125±3(for 2C/3C/4C)
(-55°C to +125°C)
4
150±3(for 0C)
: Within +15/-40%
85±3(for other TC)
(+125°C to +150°C)
5
20±2
B1: Within +10/-30%
50% of
R1: Within +15/-40%
the rated
2) High Dielectric Constant Type
F1: Within +30/-95%
voltage
Capacitance
ithin±0.2% or±0.05pF
W
Drift
(Whichever is larger.)
*Not apply to 1X/25V
The ranges of capacitance change compared with the 20℃
value over the temperature ranges shown in the table should be
within the specified ranges.*
In case of applying voltage, the capacitance change should be
measured after 1 more min. with applying voltage in
equilibration of each temp. stage.
Step
1
Temperature(℃)
20±2/25±2
-55±3(for R1,R7,R6,R9,C7,C8,L8)/
-25±3(for B1,B3,F1)/
-30±3(for F5)
20±2/25±2
125±3(for R1,R7,C7)/150±3(for R9,L8)
105±3(for C8)/85±3(for B1,B3,R6,F1,F5)
20±2
-55±3(for R1)/-25±3(for B1,F1)
20±2
125±3(for R1)/85±3(for B1,F1)
Applying
voltage
*Initial measurement for high
dielectric constant type
Perform a heat treatment at 150
+0/-10℃ for one hour and then
set for 24±2 hours at room
temperature.
Perform the initial measure-ment.
2
3
4
5
6
7
8
No bias
50% of the
rated voltage
JEMCGS-0001S
2
■SPECIFICATIONS
AND TEST METHODS
No
Item
Specification
Temperature
High Dielectric
Compensating Type
Constant Type
No removal of the terminations or other defect should occur.
Test Method
Solder the capacitor on the test jig (glass epoxy board)shown in
Fig.3 using an eutectic solder. Then apply 10N* force in parallel
with the test jig for 10±1seconds.
The soldering should be done either with an iron or using the
reflow method and should be conducted with care so that the
soldering is uniform and free of defects such as heat shock.
*1N(GRM02),2N(GRM03),5N(GRM15,GRM18)
Solder the capacitor on the test jig (glass epoxy board) in the same
manner and under the same conditions as (10).
The capacitor should be subjected to a simple harmonic motion
having a total amplitude of 1.5mm, the frequency being varied
uniformly between the approximate limits of 10 and 55Hz. The
frequency range, from 10 to 55Hz and return to 10Hz, should be
traversed in approximately 1 minute. This motion should be
applied for a period of 2 hours in each 3 mutually perpendicular
directions(total of 6 hours).
10
Adhesive Strength
of Termination
11
Vibration
Resistance
Appearance No defects or abnormalities.
Capacitance Within the specified tolerance.
Q/D.F.
30pF and over:Q≧1000
30pF and beloow:Q≧400+20C
C:Nominal Capacitance(pF)
[B1,B3,R1,R6,R7,C7,C8,L8]
W.V.:100V :0.025max.(C＜0.068mF)
:0.05max.(C≧0.068mF)
W.V.:50V/25V :0.025max.
W.V.:16V/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C＜3.3mF)
:0.1max.(C≧3.3mF)
[R9]
W.V.:50V: 0.05max.
[F1,F5]
W.V.:25Vmin
:0.05max. (C＜0.1mF)
:0.09max. (C≧0.1mF)
W.V.:16V/10V:0.125max.
W.V.:6.3V:0.15max.
12
Deflection
Appearance No defects or abnormalities.
Capacitance Within ±5% or± 0.5pF
Change
(Whichever is larger)
Within ±10%
Solder the capacitor on the test jig (glass epoxy board) shown in
Fig.1 using an eutectic solder. Then apply a force in the direction
shown in Fig 2 for 5±1 seconds. The soldering should be done
by the reflow method and should be conducted with care so that
the soldering is uniform and free of defects such as heat shock.
Immerse the capacitor in a solution of ethanol (JIS-K-8101) and
rosin (JIS-K-5902) (25% rosin in weight propotion) .
Preheat at 80 to 120℃ for 10-to 30 seconds.
After preheating, immerse in an eutectic solder solution for
2±0.5 seconds at 230±5℃ or Sn-3.0Ag-0.5Cu solder solution
for 2±0.5 seconds at 245±5℃.
13
Solderability
of Termination
75% of the terminations is to be soldered evenly and continuously.
14
Resistance to
Soldering Heat
Appearance No defects or abnormalities.
Capacitance
Within
±2.5%
or± 0.25pF
(Whichever is larger)
Change
30pF and over:Q≧1000
Q/D.F.
Preheat the capacitor at 120 to 150℃ for 1 minute.
Immerse the capacitor in an eutectic solder solution* or
B1,B3,R1,R6,R7,R9,C7,C8,L8:Within
±7.5%
Sn-3.0Ag-0.5Cu solder solution at 270±5℃ for 10±0.5 seconds.
F1,F5
:Within
±20%
Set at room temperature for 24±2 hours, then measure.
［B1,B3,R1,R6,R7,C7,C8,L8½
*Not apply to GRM02
· Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10C for one hour and then set
at room temperature for 24±2 hours.
Perform the initial measurement.
30pF and beloow:Q≧400+20C W.V.:100V :0.025max.(C＜0.068mF)
:0.05max.(C≧0.068mF)
C:Nominal Capacitance(pF)
W.V.:50V/25V :0.025max.
W.V.:16V/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C＜3.3mF)
:0.1max.(C≧3.3mF)
[R9]
W.V.:50V: 0.05max.
[F1,F5]
W.V.:25Vmin
:0.05max. (C＜0.1mF)
:0.09max. (C≧0.1mF)
W.V.:16V/10V:0.125max.
W.V.:6.3V:0.15max.
*Preheating for GRM32/43/55
Table1
Step
1
2
Temperature
100C to 120C
170C to 200C
Time
1 min.
1 min.
I.R.
Dielectric
Strength
More than 10,000MW or 500W·F(Whichever is smaller)
No defects.
Fix the capacitor to the supporting jig in the same
manner and under the same conditions as (10).
B1,B3,R1,R6,R7,R9,C7,C8,L8:Within
±7.5%
Perform the five cycles according to the four heat
F1,F5
:Within
±20%
treatments shown in the following table.
［B1,B3,R1,R6,R7,C7,C8,L8½
Set for 24±2 hours at room temperature, then measure.
Step
1
Temp.(C)
Min.
Operating Temp.+0/-3
Room Temp
Max.
Operating Temp.+3/-0
Room Temp
15
Temperature
Cycle
Appearance No defects or abnormalities.
Capacitance
Within
±2.5%
or± 0.25pF
(Whichever is larger)
Change
30pF and over:Q≧1000
Q/D.F.
30pF and beloow:Q≧400+20C W.V.:100V :0.025max.(C＜0.068mF)
:0.05max.(C≧0.068mF)
C:Nominal Capacitance(pF)
W.V.:50V/25V :0.025max.
W.V.:16V/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C＜3.3mF)
:0.1max.(C≧3.3mF)
[R9]
W.V.:50V: 0.05max.
[F1,F5]
W.V.:25Vmin
:0.05max. (C＜0.1mF)
:0.09max. (C≧0.1mF)
W.V.:16V/10V:0.125max.
W.V.:6.3V:0.15max.
Time (min)
30±3
2 to 3
30±3
2 to 3
2
3
4
· Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10C for one hour and then set
at room temperature for 24±2 hours.
Perform the initial measurement.
I.R.
Dielectric
Strength
More than 10,000MW or 500W·F(Whichever is smaller)
No defects.
JEMCGS-0001S
3
■SPECIFICATIONS
AND TEST METHODS
Specification
No
16
Humidity
(Steady State)
Item
Temperature
Compensating Type
High Dielectric
Constant Type
Test Method
Appearance
No defects or abnormalities.
Capacitance
Within
±5%
or± 0.5pF
(Whichever is larger)
Change
30pF and over:Q≧350
Q/D.F.
Set the capacitor at 40±2℃ and in 90 to 95% humiduty
for 500±12 hours.
B1,B3,R1,R6,R7,R9,C7,C8,L8:Within
±12.5%
Remove and set for 24±2 hours at room temperature,
F1,F5
:Within
±30%
then measure.
［B1,B3,R1,R6,R7,C7,C8,L8½
10pF and over
W.V.:100V :0.05max.( C＜0.068mF)
30pF and below:Q≧275+5C/2
:0.075max.(C≧0.068mF)
10pF and below:Q≧200+10C
W.V.:50V/25V :0.05max.
C:Nominal Capacitance(pF)
W.V.:16V/10V :0.05max.
W.V.:6.3V/4V :0.075max.(C＜3.3mF)
:0.125max.(C≧3.3mF)
[R9]
W.V.:50V: 0.075max.
[F1,F5]
W.V.:25Vmin
:0.075max. (C＜0.1mF)
:0.125max. (C≧0.1mF)
W.V.:16V/10V:0.15max.
W.V.:6.3V:0.2max.
I.R.
More than 1,000MW or 50W·F(Whichever is smaller)
17
Humidity Load
Appearance
No defects or abnormalities.
Capacitance
Within
±7.5%
or±0.75pF
(Whichever is larger)
Change
B1,B3,R1,R6,R7,R9,C7,C8,L8:
Within
±12.5%
F1,F5
:Within
±30%
[W.V.:10Vmax.]
F1 :Within+30/-40%
Apply the rated voltage at 40±2℃ and 90 to 95% humidity
for 500±12 hours. Remove and set for 24±2 hours at room
temprature, then muasure. The charge/discharge current
is less than 50mA.
Q/D.F.
30pF and over:Q≧200
［B1,B3,R1,R6,R7,C7,C8,L8½
30pF and below:Q≧100+10C/3 W.V.:100V :0.05max.( C＜0.068mF)
:0.075max.(C≧0.068mF)
C:Nominal Capacitance(pF) W.V.:50V/25V :0.05max.
W.V.:16V/10V :0.05max.
W.V.:6.3V/4V :0.075max.(C＜3.3mF)
:0.125max.(C≧3.3mF)
[R9]
W.V.:50V: 0.075max.
[F1,F5]
W.V.:25Vmin
:0.075max. (C＜0.1mF)
:0.125max. (C≧0.1mF)
W.V.:16V/10V:0.15max.
W.V.:6.3V:0.2max.
• Initial measurement for F1/10Vmax.
Apply the rated DC voltage for 1 hour at 40±2℃.
Remove and set for 24±2 hours at room temperature.
Perform initial measurement.
I.R.
Load
More than 500MΩ or 25Ω·F(Whichever is smaller)
Apply 200% of the rated voltage at the maximum
operating temperature±3℃ for 1000±12 hours.
Set for 24±2 hours at room temperature, then measure.
The charge/discharge current is less than 50mA.
18
High Temperature
Appearance No defects or abnormalities.
Capacitance
Within
±3%
or
±0.3pF
(Whichever is larger)
Change
B1,B3,R1,R6,R7,R9,C7,C8,L8:
Within
±12.5%
F1,F5
:Within
±30%
[Except 35V,10Vmax and C≧1.0.
mF]
F1 :Within+30/-40%
[35V, 10Vmax and C≧1.0.
mF]
Q/D.F.
30pF and over:Q≧350
［B1,B3,R1,R6,R7,C7,C8,L8½
10pF and over
W.V.:100V :0.05max.( C＜0.068mF)
30pF and below: Q≧275+5C/2
:0.075max.(C≧0.068mF)
10pF and below:Q≧200+10C
W.V.:50V/25V :0.05max.
C:Nominal Capacitance (pF)
W.V.:16V/10V :0.05max.
W.V.:6.3V/4V :0.075max.(C＜3.3mF)
:0.125max.(C≧3.3mF)
[R9]
W.V.:50V: 0.075max.
[F1,F5]
W.V.:25Vmin
:0.075max. (C＜0.1mF)
:0.125max. (C≧0.1mF)
W.V.:16V/10V:0.15max.
W.V.:6.3V:0.2max.
½Initial
measurement for high dielectric constant type.
Apply 200% of the rated DC voltage at the maximun operating
temperature ±3°C for one hour. Remove and set for
24±2 hours at room temperature.
Perform initial measurement.
I.R.
Table A
Char.
More than 1,000MW or 50W·F(Whichever is smaller)
Capacitance Change from 20C (%)
Nominal
Values
-55
-25
-10
(ppm/C) *
Max.
Min.
Max.
Min.
Max.
Min.
2C/0C
0± 60
0.82
-0.45
0.49
-0.27
0.33
-0.18
3C
0±120
1.37
-0.90
0.82
-0.54
0.55
-0.36
4C
0±250
2.56
-1.88
1.54
-1.13
1.02
-0.75
2P
-150± 60
-
-
1.32
0.41
0.88
0.27
3P
-150±120
-
-
1.65
0.14
1.10
0.09
4P
-150±250
-
-
2.36
-0.45
1.57
-0.30
2R
-220± 60
-
-
1.70
0.72
1.13
0.48
3R
-220±120
-
-
2.03
0.45
1.35
0.30
4R
-220±250
-
-
2.74
-0.14
1.83
-0.09
2S
-330± 60
-
-
2.30
1.22
1.54
0.81
3S
-330±120
-
-
2.63
0.95
1.76
0.63
4S
-330±250
-
-
3.35
0.36
2.23
0.24
2T
-470± 60
-
-
3.07
1.85
2.05
1.23
3T
-470±120
-
-
3.40
1.58
2.27
1.05
4T
-470±250
-
-
4.12
0.99
2.74
0.66
3U
-750±120
-
-
4.94
2.84
3.29
1.89
4U
-750+250
-
-
5.65
2.25
3.77
1.50
1X
+350 to -1000
-
-
-
-
-
-
* Nominal values denote the temperature coefficient within a range of 20C to 125C(for
C)/
150C(for 0C)/85C(for other TC).
JEMCGS-0001S
4
■SPECIFICATIONS
AND TEST METHODS
Test method : Deflection
・Test
substrate
Material
: Copper-clad laminated sheets for PCBs
(Glass fabric base, epoxy resin)
Thickness : 1.6mm (GRM02/03/15: t:0.8mm)
Copper foil thickness : 0.035mm
Gray colored part of Fig.1: Solder resist
(Coat with heat resistant resin for soldr)
Adhesive Strength of Termination,Vibration Resistance,Temperature Cycle,
Humidity ,Humidity Load,High Temperature Load
・Test
substrate
Material
: Copper-clad laminated sheets for PCBs
(Glass fabric base, epoxy resin)
Thickness : 1.6mm (GRM02/03/15: t:0.8mm)
Copper foil thickness : 0.035mm
c
*1,2：2.0±0.05
φ1.5
+0.1
-0
4.0±0.1
＊1
Land
f4.5
＊2
b
a
ﾗﾝﾄﾞ
b
c
c
f4.5
3.5±0.05
40
1.75±0.1
8.0±0.3
b
Ａ
Solder resist
Ｂ
a
c
Glass epoxy board
Baked electrode or
copper foil
0.05以下
100
t
Fig.1
(in:mm)
Fig.3
(in:mm)
Type
GRM02
GRM03
GRM15
GRM18
GRM21
GRM31
GRM32
GRM43
GRM55
a
0.2
0.3
0.4
1.0
1.2
2.2
2.2
3.5
4.5
Dimension (mm)
b
0.56
0.9
1.5
3.0
4.0
5.0
5.0
7.0
8.0
c
0.23
0.3
0.5
1.2
1.65
2.0
2.9
3.7
5.6
Type
GRM02
GRM03
GRM15
GRM18
GRM21
GRM31
GRM32
GRM43
GRM55
a
0.2
0.3
0.4
1.0
1.2
2.2
2.2
3.5
4.5
Dimension (mm)
b
0.56
0.9
1.5
3.0
4.0
5.0
5.0
7.0
8.0
c
0.23
0.3
0.5
1.2
1.65
2.0
2.9
3.7
5.6
20
50
Pressurization
speed
1.0mm/s
citor
Pressurize
R230
5
Support
Capacitance meter
Flexure:≦1
45
Fig.2
45
(in:mm)
JEMCGS-0001S
5
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