CHIP MONOLITHIC CERAMIC CAPACITOR FOR AUTOMOTIVE
GCM32EC71H106MA03_ (1210, X7S, 10uF, 50Vdc)
_: packaging code
1.Scope
Reference Sheet
This product specification is applied to Chip Monolithic Ceramic Capacitor used for Automotive Electronic equipment.
2.MURATA Part NO. System
(Ex.)
GCM
32
(1)L/W
Dimensions
E
(2)T
Dimensions
C7
(3)Temperature
Characteristics
1H
(4)DC Rated
Voltage
106
M
A03
L
(5)Nominal (6)Capacitance
Tolerance
Capacitance
(7)Murata’s (8)Packaging
Code
Control Code
3. Type & Dimensions
L
W
T
e
g
e
(1)-1 L
3.2±0.3
(1)-2 W
2.5±0.2
(2) T
2.5±0.2
e
0.3 min.
(Unit:mm)
g
1.0 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):X7S(EIA)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
DC Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operationg
Temp. Range)
-22 to 22 %
-55 to 125 °C
(25 °C)
50 Vdc
10 uF
±20 %
-55 to 125 °C
5.Package
mark
L
K
(8) Packaging
f180mm
Reel
EMBOSSED W8P4
f330mm
Reel
EMBOSSED W8P4
Packaging Unit
1000 pcs./Reel
4000 pcs./Reel
Product specifications in this catalog are as of Jan.26,2013,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GCM32EC71H106MA03-01
1
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Pre-and Post-Stress
1
Electrical Test
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
R9 : More than 150Ω
・F
3 Temperature Cycling
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃
for one hour and then set
for 24±2 hours at room temperature.
Perform the initial measurement.
4 Destructive
Phisical Analysis
5 Moisture Resistance
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within ±3.0% or ±0.30pF
(Whichever is larger)
30pFmin. : Q≧350
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q
≧200+10C
C: Nominal Capacitance(pF)
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
R9 : More than 150Ω
・F
C7/R7*/L8 :
W.V.: 25Vmin.: 0.03 max.
W.V.: 16V/10V : 0.05 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.075max.
C7/R7/L8/R9: Within ±12.5%
Apply the 24-hour heat (25 to 65℃) and humidity (80 to 98%)
treatment shown below, 10 consecutive times.
Set for 24±2 hours at room temperature, then measure.
Temperature
(℃)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
-5
-10
Humidity
90½98%
Humidity
80½98%
Humidity
90½98%
Humidity
80½98% Humidity
90½98%
Temperature
Compensating Type
AEC-Q200 Test Method
High Dielectric Type
-
Set the capacitor for 1000±12 hours at 150±3℃. Set for
24±2 hours at room temperature, then measure.
C7/R7/L8/R9: Within ±10.0%
C7/R7*/L8 :
W.V.: 25Vmin.: 0.03 max.
W.V.: 16V/10V : 0.05 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.075max.
2 High Temperature
Exposure (Storage)
Fix the capacitor to the supporting jig in the same manner and under
the same conditions as (19). Perform cycle test according to the four
heat treatments listed in the following table. Set for 24±2 hours at
C7/R7/L8/R9: Within ±10.0%
C7/R7*/L8 :
W.V.: 25Vmin.: 0.03 max.
W.V.: 16V/10V : 0.05 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.075max.
room temperature, then measure
Step
1
2
3
4
Time(min)
15±3
1
15±3
1
Cycles
1000(for ΔC/C7/R7)
300(for 5G/L8/R9)
-55℃+0/-3
-55℃+0/-3
Room
Room
125℃+3/-0
150℃+3/-0
Room
Room
No defects or abnormalities
Per EIA-469.
+10
- 2℃
Initial measuremt
One cycle 24hours
0
1 2
3
4 5
6
7
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Hours
6 Biased Humidity
Appearance
Capacitance
Change
Q/D.F.
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±3.0% or ±0.30pF
(Whichever is larger)
30pF and over: Q≧200
30pF and below: Q≧100+10C/3
C: Nominal Capacitance(pF)
I.R.
More than 1,000MΩ or 50Ω
・F
(Whichever is smaller)
C7/R7*/L8 :
W.V.: 25Vmin.: 0.035 max.
W.V.: 16V/10V : 0.05 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.075max.
C7/R7/L8/R9: Within ±12.5%
Apply the rated voltage and 1.3+0.2/-0vdc (add 6.8kΩ resister)
at 85±3℃ and 80 to 85% humidity for 1000±12 hours.
Remove and set for 24±2 hours at room temprature, then measure.
The charge/discharge current is less than 50mA.
JEMCGS-0474J
2
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
7 Operational Life
Appearance
Capacitance
Change
Q/D.F.
Temperature
High Dielectric Type
Compensating Type
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±3.0% or ±0.30pF
(Whichever is larger)
30pFmin. : Q≧350
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q
≧200+10C
C: Nominal Capacitance(pF)
C7/R7*/L8 :
C7/R7/L8/R9: Within ±12.5%
AEC-Q200 Test Method
Apply 150% of the rated voltage for 1000±12 hours at 125±3℃(for
Δ C/C7/R7), 150±3℃(for 5G/L8/R9).
Set for 24±2 hours at room temperature, then measure.
The charge/discharge current is less than 50mA.
・
Initial measurement for high dielectric constant type.
W.V.: 25Vmin.: 0.035 max.
(GCM155R71H 562-223: 0.05max.) Apply 150% of the rated DC voltage for one hour at the maximun
(GCM188L81E224: 0.04max.)
W.V.: 16V/10V : 0.05 max.
R9 : 0.075max.
operating temperature
±3℃.
Remove and set for 24±2 hours at
*R7 : W.V.: 100V.: 0.05 max. room temperature. Perform initial measurement.
I.R.
More than 1,000MΩ or 50Ω
・F
(Whichever is smaller)
8 External Visual
9 Phisical Dimension
10 Resistance to
Solvents
Appearance
Capacitance
Change
Q/D.F.
No defects or abnormalities
Within the specified dimensions
No marking defects
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
C7/R7*/L8 :
W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V : 0.035 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.05max.
Visual inspection
Using calipers
Per MIL-STD-202 Method 215
Solvent 1 : 1 part (by volume) of isopropyl alcohol
3 parts (by volume) of mineral spirits
Solvent 2 : Terpene defluxer
Solvent 3 : 42 parts (by volume) of water
1part (by volume) of propylene glycol monomethylether
1 part (by volume) of monoethanolomine
11 Mechanical
Shock
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
C7/R7*/L8 :
W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V : 0.035 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.05max.
Three shocks in each direction should be applied along 3 mutually
perpendicular axes of the test specimen (18 shocks).
The specified test pulse should be Half-sine and should have a
duration :0.5ms, peak value:1500g and velocity change: 4.7m/s.
I.R.
12 Vibration
Appearance
Capacitance
Change
Q/D.F.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
No defects or abnormalities
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
C7/R7*/L8 :
W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V : 0.035 max.
R9 : 0.05max.
Solder the capacitor to the test jig (glass epoxy board) in the same
manner and under the same conditions as (19). The capacitor
should be subjected to a simple harmonic motion having a total
amplitude of 1.5mm, the frequency being varied uniformly between
the approximate limits of 10 and 2000Hz. The frequency range, from
10 to 2000Hz and return to 10Hz, should be traversed in
items in each 3 mutually perpendicular directions (total of 36 times).
*R7 : W.V.: 100V.: 0.05 max. approximately 20 minutes. This motion should be applied for 12
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
13 Resistance to
Soldering Heat
Appearance
Capacitance
Change
Q/D.F.
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within the specified tolerance
Immerse the capacitor in a eutectic solder solution at 260±5℃ for
10±1 seconds. Set at room temperature for 24±2 hours, then
measure.
・
Initial measurement for high dielectric constant type
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
C7/R7*/L8 :
W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V : 0.035 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.05max.
Perform a heat treatment at 150+0/-10
℃
for one hour and then set
for 24±2 hours at room temperature.
Perform the initial measurement.
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
JEMCGS-0474J
3
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Temperature
High Dielectric Type
Compensating Type
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
Capacitance
Change
Q/D.F.
AEC-Q200 Test Method
Fix the capacitor to the supporting jig in the same manner and under
the same conditions as (19). Perform the 300 cycles according to
the two heat treatments listed in the following table(Maximum
transfer time is 20 seconds). Set for 24±2 hours at room
temperature, then measure
Step
Temp.(℃)
Time
(min.)
1
-55+0/-3
15±3
2
125+3/-0(forΔC/C7/R7)
150+3/-0(for 5G/L8/R9)
15±3
14 Thermal Shock
No marking defects
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
C7/R7**/L8 : W.V.: 25Vmin.: 0.025 max.*
*0.05max:GCM188R71E/1H563 to 104
**R7 : W.V.: 100V.: 0.05 max.
W.V.: 16V/10V : 0.035 max.
R9 : 0.05max
C7/R7/L8/R9: Within ±10.0%
I.R.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃ for
one hour and then set
for 24±2 hours at room temperature.
Perform the initial measurement.
15 ESD
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
C7/R7*/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V :0.035 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.05max.
Per AEC-Q200-002
I.R.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
95% of the terminations is to be soldered evenly and continuously.
(a) Preheat at 155℃ for 4 hours. After preheating, immerse the
capacitor
in a solution of ethanol(JIS-K-8101) and rosin (JIS-K-
5902)
(25% rosin in weight propotion). Immerse in
eutectic
solder solution for 5+0/-0.5 seconds at 235±5℃.
16 Solderability
(b) should be placed into steam aging for 8 hours±15 minutes.
After
preheating, immerse the capacitor in a solution of
ethanol(JIS-K-8101)
and rosin (JIS-K-5902) (25% rosin in weight
propotion).
Immerse in eutectic solder solution for 5+0/-0.5
seconds
at 235±5℃.
(c) should be placed into steam aging for 8 hours±15 minutes.
After
preheating, immerse the capacitor in a solution of
ethanol(JIS-K-8101)
and rosin (JIS-K-5902) (25% rosin in weight
propotion).
Immerse in eutectic solder solution for 120±5
seconds at 260±5℃.
17 Electrical
Chatacteri-
zation
Appearance
Capacitance
Change
Q/D.F.
No defects or abnormalities
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
C7/R7*/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V :0.035 max.
*R7 : W.V.: 100V.: 0.05 max.
R9 : 0.05max.
Visual inspection.
The capacitance/Q/D.F. should be measured at 25℃ at the
frequency and voltage shown in the table.
Char.
Item
Frequency
Voltage
ΔC,5G
(1000 pF and below)
1±0.1MHz
0.5 to 5Vrms
ΔC,5G
(more than 1000pF)
C7,R7,L8,R9(C≦10μF)
1±0.1kHz
1±0.2Vrms
I.R. 25℃
More than 100,000MΩ or 1000Ω・F
(Whichever is smaller)
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
More than 1,000MΩ or 10Ω・F
(Whichever is smaller)
More than 1,000MΩ or 1Ω・F
(Whichever is smaller)
The insulation resistance should be measured with a DC voltage not
exceeding the rated voltage at 25℃ and 125℃(for Δ C/C7/R7)/ 150℃
(for
5G/L8/R9)within 2 minutes of charging.
I.R. 125℃
More than 10,000MΩ or 100Ω・F
(Whichever is smaller)
I.R. 150℃
More than 10,000MΩ or 100Ω・F
(Whichever is smaller)
Dielectric
Strength
No failure
No failure should be observed when 250% of the rated voltage is
applied between the terminations for 1 to 5 seconds, provided the
charge/ discharge current is less than 50mA.
JEMCGS-0474J
4
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Appearance
Temperature
Compensating Type
No marking defects
High Dielectric Type
AEC-Q200 Test Method
Solder the capacitor on the test jig (glass epoxy board) shown in
Fig1 using a eutectic solder. Then apply a force in the direction
shown in Fig 2 for 5±1sec. The soldering should be done by the
reflow method and should be conducted with care so that the
Capacitance
Change
Q/D.F.
Within ±5.0% or ±0.5pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C7/R7*/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V :0.035 max.
*R7 : W.V.: 100V.: 0.05 max.
C: Nominal Capacitance(pF) R9 : 0.05max.
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
f4.5
*1,2:2.0±0.05
4.0±0.1
*1
18 Board Flex
C7/R7/L8/R9: Within ±10.0%
soldering is uniform and free of defects such as heat shock.
Type
GCM15
GCM18
GCM21
GCM31
45
GCM32
a
½ンデン½
0.5
0.6
0.8
2.0
45
2.0
b
1.5
2.2
3.0
4.4
支持台
4.4
c
0.6
0.9
1.3
1.7
2.6
φ1.5
+0.1
-0
*2
3.5± 0.05
R4
Pressurizing
speed:1.0mm/sec
Pressurize
8.0±0.3
40
c
c
A
B
a
100
Capacitance meter
0.05以下
Fig.1
45
45
t : 1.6mm
(GCM15:0.8mm)
19 Terminal
Strength
Capacitance
Change
Q/D.F.
Within specified tolerance
C7/R7*/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V :0.035 max.
30pFmax.: Q
≧400+20C
*R7 : W.V.: 100V.: 0.05 max.
C: Nominal Capacitance(pF) R9 : 0.05max.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
30pFmin. : Q≧1000
Appearance
No marking defects
Fig.2
Flexure:≦2
(High Dielectric Type)
Flexure:≦3
t
(Temperature
Compensating Type)
Solder the capacitor to the test jig (glass epoxy board) shown in
Fig.3 using a eutectic solder. Then apply *18N force in parallel with
the test jig for 60sec.
The soldering should be done either with an iron or using the reflow
method and should be conducted with care so that the soldering is
uniform and gree of defects such as heat shock
*2N(GCM15)
Type
GCM15
GCM18
GCM21
GCM31
GCM32
a
0.4
1.0
1.2
2.2
2.2
b
1.5
3.0
4.0
5.0
5.0
c
0.5
1.2
1.65
2.0
2.9
I.R.
1.75±0.1
b
20
114
(in
mm)
c
(in
mm)
b
a
ランド
b
f4.5
Solder resist
Baked electrode or
Copper foil
c
a
20 Beam Load Test
Destruction value should be exceed following one.
< Chip L dimension : 2.5mm max. >
Chip thickness > 0.5mm rank : 20N
Chip thickness
≦0.5mm
rank : 8N
< Chip L dimension : 3.2mm max. >
Chip thickness < 1.25mm rank : 15N
Chip thickness
≧1.25mm
rank : 54.5N
Fig.3
Place the capacitor in the beam load fixture as Fig 4.
Apply a force.
< Chip Length : 2.5mm max. >
Iron Board
< Chip Length : 3.2mm min. >
L
0.6L
Fig.4
Speed supplied the Stress Load : 2.5mm / sec.
JEMCGS-0474J
5