This product specification is applied to Chip Monolithic Ceramic Capacitor limited to Conductive Glue Mounting Type used for Automotive Electronic equipment with
conductive glue mounting.
2.MURATA Part NO. System
(Ex.)
GCG
21
(1)L/W
Dimensions
9
(2)T
Dimensions
R9
(3)Temperature
Characteristics
1H
(4)Rated
Voltage
103
(5)Nominal
Capacitance
K
(6)Capacitance
Tolerance
A03
(7)Murata’s Control
Code
D
(8)Packaging Code
3. Type & Dimensions
(1)-1 L
2.0±0.3
(1)-2 W
1.25±0.2
(2) T
0.85±0.1
e
0.2 to 0.7
(Unit:mm)
g
0.7 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):X8R(EIA)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operating
Temp. Range)
-15 to 15 %
-55 to 150 °C
(25 °C)
DC 50 V
10000 pF
±10 %
-55 to 150 °C
5.Package
mark
D
J
(8) Packaging
f180mm
Reel
PAPER W8P4
f330mm
Reel
PAPER W8P4
Packaging Unit
4000 pcs./Reel
10000 pcs./Reel
Product specifications in this catalog are as of Apr.15,2016,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GCG219R91H103KA03-01
1
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Pre-and Post-Stress
1
Electrical Test
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
Temperature
Compensating Type
AEC-Q200 Test Method
High Dielectric Type
-
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as No.16.
Set the capacitor for 1000±12 hours at 150±3℃. Set for
R7/L8/R9:Within
±12.5%
R7/L8 : 0.05 max.
R9 : 0.075max.
24±2 hours at room temperature, then measure.
2 High Temperature
Exposure (Storage)
Appearance
Capacitance
Change
Q/D.F.
More than 10,000MΩ or 500Ω・ F
R9 : More than 3,000MΩ or 150 Ω・ F
(Whichever is smaller)
3 Temperature Cycling
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin.: Q
≧1000
30pFmax.: Q
≧
400+20C
C: Nominal Capacitance (pF)
R7/L8 W.V.: 25Vmin.: 0.03 max.
W.V.:
16V : 0.05 max
R9 : 0.075max.
R7/L8/R9: Within ±10.0%
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as No.16. Perform the 1000 cycles
according to the four heat treatments listed in the following table.
Set for 24±2 hours at room temperature, then measure
Step
Temp.
(C)
Time
153
(min.)
1
1
-55+0/-3
2
Room
Temp.
Appearance
Capacitance
Change
Q/D.F.
3
125+3/-0(for
C/R7)
150+3/-0(for 5G/L8/R9)
4
Room
Temp.
153
1
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃
for one hour and then set
for 24±2 hours at room temperature.
Perform the initial measurement.
4 Destructive
Physical Analysis
5 Moisture Resistance
No defects or abnormalities
The measured and observed characteristics should satisfy the
specifications in the following table.
Per EIA-469.
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as No.16.
Apply the 24-hour heat (25 to 65℃) and humidity (80 to 98%)
treatment shown below, 10 consecutive times.
Set for 24±2 hours at room temperature, then measure.
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within ±3.0% or ±0.30pF
(Whichever is larger)
30pFmin. : Q≧350
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q
≧200+10C
C: Nominal Capacitance(pF)
R9 : 0.075max.
R7/L8 : 0.05 max.
R7/L8/R9: Within ±12.5%
Temperature
(℃)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
-5
-10
Humidity
90½98%
Humidity
80½98%
Humidity
90½98%
Humidity
80½98% Humidity
90½98%
I.R.
More than 10,000MΩ or 500Ω
・F
R9 : More than 3,000MΩ or 150 Ω・ F
+10
- 2
℃
Initial measuremt
(Whichever is smaller)
One cycle 24hours
0
1 2
3
4 5
6
7
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Hours
6 Biased Humidity
Appearance
Capacitance
Change
Q/D.F.
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±3.0% or ±0.30pF
(Whichever is larger)
30pF and over: Q≧200
30pF and below: Q≧100+10C/3
C: Nominal Capacitance(pF)
R7/L8 : 0.05 max.
R9 : 0.075max.
R7/L8/R9: Within ±12.5%
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as No.16.
Apply the rated voltage and 1.3+0.2/-0vdc (add 6.8kΩ resister)
at 85±3℃ and 80 to 85% humidity for 1000±12 hours.
Remove and set for 24±2 hours at room temperature, then measure.
The charge/discharge current is less than 50mA.
I.R.
More than 1,000MΩ or 50Ω
・F
(Whichever is smaller)
JEMCGS-01499C
2
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
7 Operational Life
Appearance
Capacitance
Change
Q/D.F.
Temperature
High Dielectric Type
Compensating Type
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±3.0% or ±0.30pF
(Whichever is larger)
30pFmin. : Q≧350
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q
≧200+10C
C: Nominal Capacitance(pF)
R7/L8 : 0.05 max.
R9 : 0.075max.
AEC-Q200 Test Method
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as No.16.
Apply 200% of the rated voltage for 1000±12 hours at 125±3℃(for
R7/L8/R9: Within ±12.5%
Δ C/R7), 150±3℃(for 5G/L8/R9).
Set for 24±2 hours at room temperature, then measure.
The charge/discharge current is less than 50mA.
・
Initial measurement for high dielectric constant type.
Apply 200% of the rated DC voltage for one hour at the maximum
operating temperature
±3℃.
Remove and set for 24±2 hours at
room temperature. Perform initial measurement.
I.R.
More than 1,000MΩ or 50Ω
・F
(Whichever is smaller)
8 External Visual
No defects or abnormalities
Visual inspection
9 Physical Dimension
Within the specified dimensions
Using calipers
10 Resistance to
Appearance
Solvents
Capacitance
Change
Q/D.F.
No marking defects
Within the specified tolerance
Per MIL-STD-202 Method 215
Solvent 1 : 1 part (by volume) of isopropyl alcohol
3 parts (by volume) of mineral spirits
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V : 0.035 max.
R9 : 0.075max.
Solvent 2 : Terpene defluxer
Solvent 3 : 42 parts (by volume) of water
1part (by volume) of propylene glycol monomethyl ether
1 part (by volume) of monoethanolamine
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
11 Mechanical
Shock
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within the specified tolerance
Fix the capacitor to the test jig in the same manner and under the
same conditions as No.16.Three shocks in each direction should be
applied along 3 mutually perpendicular axes of the test specimen
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V : 0.035 max.
R9 : 0.075max.
(18 shocks).
The specified test pulse should be Half-sine and should have a
duration :0.5ms, peak value:1500g and velocity change: 4.7m/s.
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
12 Vibration
Appearance
Capacitance
Change
Q/D.F.
No defects or abnormalities
Within the specified tolerance
Fix the capacitor to the test jig in the same manner and under the
same conditions as No.16. The capacitor should be subjected to a
simple harmonic motion having a total amplitude of 1.5mm, the
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V : 0.035 max.
R9 : 0.075max.
frequency being varied uniformly between the approximate limits of
10 and 2000Hz. The frequency range, from 10 to 2000Hz and
return to 10Hz, should be traversed in approximately 20 minutes.
This motion should be applied for 12 cycle in each 3 mutually
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
perpendicular directions
13 Thermal Shock
Appearance
Capacitance
Change
Q/D.F.
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
R7/L8 : W.V.: 25Vmin.: 0.025 max.
GCG21BL81H104K: 0.03 max.
W.V.: 16V : 0.035 max.
R9 : 0.075max
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as No.16. Perform the 300 cycles
according to the two heat treatments listed in the following
R7/L8/R9: Within ±10.0%
table(Maximum transfer time is 20 seconds). Set for 24±2 hours at
room temperature, then measure
Step
Temp.(℃）
Time
(min.）
1
-55+0/-3
15±3
2
125+3/-0(forΔC/R7)
150+3/-0（for 5G/L8/R9）
15±3
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃ for
one hour and then set
for 24±2 hours at room temperature.
Perform the initial measurement.
JEMCGS-01499C
3
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Temperature
Compensating Type
No marking defects
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
High Dielectric Type
Per AEC-Q200-002
AEC-Q200 Test Method
14 ESD
Appearance
Capacitance
Change
Q/D.F.
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V :0.035 max.
R9 : 0.075max.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
No defects or abnormalities
Within the specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V : 0.035 max.
R9 : 0.075max.
Item
Frequency
Voltage
15 Electrical
zation
Appearance
Visual inspection.
The capacitance/Q/D.F. should be measured at 25℃ at the
frequency and voltage shown in the table.
Char.
ΔC,5G
(1000 pF and below)
1±0.1MHz
0.5 to 5Vrms
ΔC,5G
(more than 1000pF)
R7,R9,L8(C≦10μF)
1±0.1kHz
1±0.2Vrms
Chatacteri-
Capacitance
Change
Q/D.F.
I.R. 25℃
More than 100,000MΩ or 1000Ω・F
(Whichever is smaller)
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
More than 1,000MΩ or 10Ω・F
(Whichever is smaller)
More than 1,000MΩ or 1Ω・F
(Whichever is smaller)
The insulation resistance should be measured with a DC voltage not
exceeding the rated voltage at 25℃ and 125℃(for Δ C/R7)/ 150℃
（for
5G/L8/R9）within 2 minutes of charging.
I.R. 125℃
More than 10,000MΩ or 100Ω・F
(Whichever is smaller)
I.R. 150℃
More than 10,000MΩ or 100Ω・F
(Whichever is smaller)
Dielectric
Strength
No failure
No failure should be observed when 250% of the rated voltage is
applied between the terminations for 1 to 5 seconds, provided the
charge/ discharge current is less than 50mA.
16 Terminal
Strength
Appearance
Capacitance
Change
Q/D.F.
No marking defects
Within specified tolerance
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V: 0.035max.
R9 : 0.075max.
Mount the capacitor on the test jig in Fig.1 using a conductive glue
(HEREAUS"PC3000").
The conductive glue is hardened at 140℃ for 30minites.
Then apply *shear tension in parallel with the test jig for 60sec.
*Show in the table 1
Alumina
Ag Pd electrode
I.R.
More than 10,000MΩ or 500Ω
・F
(Whichever is smaller)
c
b
Type
GCG15
GCG18
GCG21
GCG31
GCG32
Share Tension
2.0N
2.7N
4.9N
6.9N
12.6N
Table.1
a
Type
GCG15
GCG18
GCG21
GCG31
GCG32
a
0.4
1.0
1.2
2.2
2.2
Fig.1
b
1.5
3.0
4.0
5.0
5.0
c
0.5
1.2
1.65
2.0
2.9
（in
mm）
JEMCGS-01499C
4
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Temperature
Compensating Type
< Chip L dimension : 2.5mm max. >
Chip thickness > 0.5mm rank : 20N
Chip thickness
≦0.5mm
rank : 8N
< Chip L dimension : 3.2mm mim. >
Chip thickness < 1.25mm rank : 15N
Chip thickness
≧1.25mm
rank : 54.5N
Iron Board
High Dielectric Type
AEC-Q200 Test Method
Place the capacitor in the beam load fixture as Fig 2.
Apply a force.
< Chip Length : 2.5mm max. >
17 Beam Load Test
Destruction value should be exceed following one.
< Chip Length : 3.2mm min. >
L
0.6L
Fig.2
Speed supplied the Stress Load : 0.5mm / sec.
18 Capacitance
Temperature
Characteristics
Capacitance
Change
Within the specified tolerance.
(Table A)
R7 : Within
±15%
(-55℃ to +125℃)
L8 : Within
±15%
(-55℃ to +125℃)
Within
+15/-40%
(+125℃ to +150℃)
R9 : Within
±15%
(-55℃ to +150℃)
The capacitance change should be measured after 5 min. at
each specified temperature stage.
(1)Temperature Compensating Type
The temperature coefficient is determined using the capacitance
measured in step 3 as a reference. When cycling the temperature
sequentially from step1 through 5 (Δ C: +25℃ to +125℃,
5G:+25℃ to +150℃ other temp. coifficient.:+25℃ to +85℃) the
capacitance should be within the specified tolerance for the
temperature coefficient and capacitance change as Table A-1. The
capacitance drift is calculated by dividing the differences
between the maximum and minimum measured values in the step
Temperature
Coefficient
Within the specified tolerance.
(Table A)
1,3 and 5 by the cap value in step 3.
Step
1
2
3
Temperature.(C)
25±2
-55±3(for
ΔC to R7)
25±2
125±3（for
ΔC/R7）,
150±3（for 5G/R9/L8）
25±2
Capacitance
Drift
Within
±0.2%
or
±0.05
pF
(Whichever is larger.)
4
5
(2) High Dielectric Constant Type
The ranges of capacitance change compared with the above 25℃
value over the temperature ranges shown in the table should be
within the specified ranges.
Initial measurement for high dielectric constant type.
Perform a heat treatment at 150+0/-10℃ for one hour
and then set for 24±2 hours at room temperature.
Perform the initial measurement.
Table A
Capacitance Change from 25C (%)
-30
-10
Max.
Min.
Max.
Min.
Max.
Min.
5C/5G
0± 30
0.58
-0.24
0.40
-0.17
0.25
-0.11
Note 1: Nominal values denote the temperature coefficient within a range of 25C to 125C(for
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Embedded System
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