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BAS116H,115

Description
Reverse recovery time (trr): 3us DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA DIODEGENPURP75V215MASOD123F
CategoryDiscrete semiconductor    diode   
File Size653KB,10 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BAS116H,115 Overview

Reverse recovery time (trr): 3us DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA DIODEGENPURP75V215MASOD123F

BAS116H,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeSOD-123
Contacts2
Manufacturer packaging codeSOD123F
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.215 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.375 W
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time3 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
BAS116H
Low leakage switching diode
Rev. 3 — 31 May 2011
Product data sheet
1. Product profile
1.1 General description
Low leakage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Small and flat lead SMD plastic package
Low leakage current
Excellent coplanarity and improved thermal behavior
AEC-Q101 qualified
1.3 Applications
General-purpose switching
1.4 Quick reference data
Table 1.
Symbol
I
F
I
R
V
R
t
rr
[1]
[2]
[3]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[3]
Conditions
[1][2]
Min
-
-
-
-
Typ
-
0.003
-
0.8
Max
215
5.0
75
3.0
Unit
mA
nA
V
s
V
R
= 75 V
Pulse test: t
p
300
s;  
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
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