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BAV70S,115

CategoryDiscrete semiconductor    diode   
File Size369KB,17 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

BAV70S,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeTSSOP
package instructionR-PDSO-G6
Contacts6
Manufacturer packaging codeSOT363
Reach Compliance Codecompliant
ECCN codeEAR99
Configuration2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

BAV70S,115 Related Products

BAV70S,115 BAV70M,315
Description DIODE ARRAY GP 100V 150MA SOT883
Brand Name Nexperia Nexperia
Maker Nexperia Nexperia
Parts packaging code TSSOP DFN
package instruction R-PDSO-G6 SC-101, 3 PIN
Contacts 6 3
Manufacturer packaging code SOT363 SOT883
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration 2 BANKS, COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G6 R-PBCC-N3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 4 2
Number of terminals 6 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.1 A 0.15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 260
Maximum power dissipation 0.35 W 0.25 W
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING NO LEAD
Terminal location DUAL BOTTOM
Maximum time at peak reflow temperature 30 30
Base Number Matches 1 1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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