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BUK7K6R2-40EX

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 40A Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 5.8mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 68W Type: Dual N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size756KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

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BUK7K6R2-40EX Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 40A Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 5.8mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 68W Type: Dual N-channel

BUK7K6R2-40EX Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C40A
Gate-source threshold voltage4V @ 1mA
Drain-source on-resistance5.8mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)68W
typeDual N-channel
BUK7K6R2-40E
6 November 2013
Dual N-channel 40 V, 5.8 mΩ standard level MOSFET
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; Tmb = 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
I
D
= 20 A; V
DS
= 32 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
40
40
68
Unit
V
A
W
Static characteristics FET1 and FET2
drain-source on-state
resistance
-
4.8
5.8
Dynamic characteristics FET1 and FET2
Q
GD
gate-drain charge
-
10.5
-
nC
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