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BUK7Y2R0-40HX

CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size258KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet View All

BUK7Y2R0-40HX Online Shopping

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BUK7Y2R0-40HX - - View Buy Now
BUK7Y2R0-40H
9 May 2018
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
Reduced cell pitch enables enhanced power density and efficiency with lower R
DSon
in
same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight V
GS(th)
limits enable easy paralleling of MOSFETs
LFPAK Gull Wing leads:
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
LFPAK copper clip technology:
Improved reliability, with reduced R
th
and R
DSon
Increases maximum current capability and improved current spreading
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
I
D
P
tot
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C
T
mb
= 25 °C;
Fig. 1
Min
-
-
-
Typ
-
-
-
Max
40
120
217
Unit
V
A
W
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