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BUK7610-100B,118

CategoryDiscrete semiconductor    The transistor   
File Size736KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK7610-100B,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)629 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)438 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7610-100B
6 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1; Fig. 3
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C;
Fig. 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 75 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
629
mJ
-
22
-
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
100
75
300
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
8.6
10
Dynamic characteristics
Q
GD
gate-drain charge
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