BUK9M12-60E
19 September 2016
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
•
•
•
•
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
•
•
•
•
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
60
54
79
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
10
12
mΩ
Dynamic characteristics
Q
GD
I
D
= 15 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
7.9
-
nC
Nexperia
BUK9M12-60E
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
5. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
Source
Source
Source
Gate
Mounting base; connected to
drain
1
2
3
4
Simplified outline
Graphic symbol
D
G
mbb076
S
LFPAK33 (SOT1210)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK9M12-60E
LFPAK33
Description
Plastic single ended surface mounted package
(LFPAK33); 8 leads
Version
SOT1210
Type number
7. Marking
Table 4.
Marking codes
Marking code
91260E
Type number
BUK9M12-60E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
Conditions
25 °C ≤ T
j
≤ 175 °C
R
GS
= 20 kΩ
DC; T
j
≤ 175 °C
Pulsed; T
j
≤ 175 °C
P
tot
I
D
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; T
mb
= 100 °C;
Fig. 2
I
DM
BUK9M12-60E
Min
-
-
-10
[1][2]
Max
60
60
10
15
79
54
38
216
Unit
V
V
V
V
W
A
A
A
-15
-
-
-
-
©
peak drain current
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 September 2016
2 / 13
Nexperia
BUK9M12-60E
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
Symbol
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
storage temperature
junction temperature
Conditions
Min
-55
-55
Max
175
175
Unit
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 54 A; V
sup
≤ 60 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1]
[2]
[3]
[4]
120
P
der
(%)
80
-
-
54
216
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[3][4]
-
50.5
mJ
Accumulated pulse duration up to 50 hours delivers zero defect ppm.
Significantly longer life times are achieved by lowering T
j
and or V
GS
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03aa16
I
D
(A)
60
50
40
30
aaa-021348
40
20
10
0
0
50
100
150
T
mb
(°C)
200
0
0
25
50
75
100
125
150 175
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
V
GS
≥ 5 V
Fig. 2.
Continuous drain current as a function of
mounting base temperature
BUK9M12-60E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 September 2016
3 / 13
Nexperia
BUK9M12-60E
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
I
D
(A)
10
3
aaa-021350
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 us
10
100 us
DC
1
1 ms
10 ms
100 ms
1
10
10
2
10
-1
V
DS
(V)
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
I
AL
(A)
10
2
aaa-021349
(1)
10
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) T
j (init)
= 25 °C; (2) T
j (init)
= 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min
-
Typ
1.58
Max
1.89
Unit
K/W
BUK9M12-60E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 September 2016
4 / 13
Nexperia
BUK9M12-60E
N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33
Z
th(j-mb)
(K/W)
10
aaa-021351
1 δ = 0.5
0.2
0.1
10
-1
0.05
0.02
single shot
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
P
δ=
t
p
T
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 9; Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 11
V
GS
= 5 V; I
D
= 15 A; T
j
= 175 °C;
Fig. 12
Dynamic characteristics
Q
G(tot)
Q
GS
BUK9M12-60E
Min
60
54
1.4
-
0.5
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
0.02
-
2
2
10
9
-
Max
-
-
2.1
2.45
-
1
500
100
100
12
11
27
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Static characteristics
V
GS(th)
total gate charge
gate-source charge
I
D
= 15 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
All information provided in this document is subject to legal disclaimers.
-
-
21
5.4
©
-
-
nC
nC
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 September 2016
5 / 13
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