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BUK9M85-60EX

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 12.8A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 73mΩ @ 5A, 10V Maximum power Dissipation (Ta=25°C): 31W(Tc) Type: N-channel
CategoryDiscrete semiconductor    The transistor   
File Size716KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK9M85-60EX Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 12.8A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 73mΩ @ 5A, 10V Maximum power Dissipation (Ta=25°C): 31W(Tc) Type: N-channel

BUK9M85-60EX Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts8
Manufacturer packaging codeSOT1210
Reach Compliance Codecompliant
Samacsys DescriptionMOSFET 60V N-CHANNEL LOGIC LEVEL
Avalanche Energy Efficiency Rating (Eas)4.55 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)12.8 A
Maximum drain-source on-resistance0.085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)51 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK9M85-60E
19 September 2016
N-channel 60 V, 85 mΩ logic level MOSFET in LFPAK33
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
60
12.8
31
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
68
85
Dynamic characteristics
Q
GD
I
D
= 5 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
2
-
nC

BUK9M85-60EX Related Products

BUK9M85-60EX 934070043115
Description Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 12.8A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 73mΩ @ 5A, 10V Maximum power Dissipation (Ta=25°C): 31W(Tc) Type: N-channel MOSFET N-CH 60V 12.8A LFPAK
Maker Nexperia Nexperia
package instruction SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code compliant compliant
Avalanche Energy Efficiency Rating (Eas) 4.55 mJ 4.55 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 12.8 A 12.8 A
Maximum drain-source on-resistance 0.085 Ω 0.085 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 51 A 51 A
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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