BAS40-04LT1G,
SBAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
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40 VOLTS
SCHOTTKY BARRIER DIODES
Extremely Fast Switching Speed
Low Forward Voltage
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25C
Derate above 25C
Operating Junction and Storage
Temperature Range
Forward Continuous Current
Single Forward Current
t
v
1s
t
v
10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
Symbol
V
R
P
F
Value
40
225
1.8
−55
to +150
120
200
600
508
311
Unit
V
mW
mW/C
C
mA
mA
CB
M
G
ANODE
1
SOT−23 (TO−236)
CASE 318
STYLE 11
CATHODE
2
3
CATHODE/ANODE
MARKING DIAGRAM
T
J,
T
stg
I
FM
I
FSM
CB MG
G
1
= Specific Device Code
= Date Code*
= Pb−Free Package
R
qJA
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAS40−04LT1G
SBAS40−04LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 11
1
Publication Order Number:
BAS40−04LT1/D
BAS40−04LT1G, SBAS40−04LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mA)
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage
(V
R
= 25 V)
Forward Voltage
(I
F
= 1.0 mA)
Forward Voltage
(I
F
= 10 mA)
Forward Voltage
(I
F
= 40 mA)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
40
−
−
−
−
−
Max
−
5.0
1.0
380
500
1.0
Unit
V
pF
mA
mV
mV
V
100
IR , REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
100
T
A
= 150C
125C
10
10
1.0
85C
150C
1.0
1 25C
85C
25C
0.1
0
0.1
0.2
- 40C
0.3
- 55C
0.4
0.5
0.6
0.7
0.8
0.1
0.01
0.001
0
25C
5.0
V
F
, FORWARD VOLTAGE (VOLTS)
10
15
V
R
, REVERSE VOLTAGE (VOLTS)
20
25
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
3.5
3.0
C T, CAPACITANCE (pF)
2.5
2.0
1.5
1.0
0.5
0
0
5.0
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
BAS40−04LT1G, SBAS40−04LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAS40−04LT1/D
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