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BAT54SLT1G

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV @ 100mA 30V, 0.2A, VF=0.8V@0.1A
CategoryDiscrete semiconductor    diode   
File Size121KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAT54SLT1G Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV @ 100mA 30V, 0.2A, VF=0.8V@0.1A

BAT54SLT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
applicationFAST RECOVERY
Minimum breakdown voltage30 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2 µA
Maximum reverse recovery time0.005 µs
Reverse test voltage25 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAT54SLT1G,
SBAT54SLT1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage
0.35 V (Typ) @ I
F
= 10 mAdc
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(T
A
= 25C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25C
Derate above 25C
Forward Current (DC)
Non−Repetitive Peak Forward Current
t
p
< 10 msec
Square pulse = 1 sec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
Value
30
225
1.8
200 Max
600
1.0
300
−55
to 150
−55
to +150
Unit
V
mW
mW/C
mA
mA
A
mA
30 VOLT
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
SOT−23
CASE 318
STYLE 11
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MARKING DIAGRAM
I
F
I
FSM
LD3M
G
G
1
LD3
M
G
= Device Code
= Date Code*
= Pb−Free Package
I
FRM
T
J
T
stg
C
C
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
BAT54SLT1G
SBAT54SLT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 15
1
Publication Order Number:
BAT54SLT1/D

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