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BCP56-16T1G

Description
Rated power: 1.5W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN NPN silicon epitaxial transistor
CategoryDiscrete semiconductor    The transistor   
File Size78KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BCP56-16T1G Overview

Rated power: 1.5W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN NPN silicon epitaxial transistor

BCP56-16T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-261AA
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BCP56T1 Series
Preferred Devices
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
applications.
Features
http://onsemi.com
Pb−Free Package is Available
High Current: 1.0 Amp
The SOT-223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
PNP Complement is BCP53T1
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
1.5
12
T
J
, T
stg
−65 to 150
Watts
mW/°C
°C
Value
80
100
5
1
Unit
Vdc
Vdc
Vdc
Adc
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER
3
4
1
2
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
AWW
xxxx
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
Symbol
R
qJA
Max
83.3
Unit
°C/W
xxxx
A
WW
= Specific Device Code
= Assembly Location
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
T
L
260
10
°C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 3
Publication Order Number:
BCP56T1/D

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