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BC817-40LT3G

Description
Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, Vceo=45V, Ic=500mA, hfe=250~600
CategoryDiscrete semiconductor    The transistor   
File Size132KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC817-40LT3G Overview

Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, Vceo=45V, Ic=500mA, hfe=250~600

BC817-40LT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID170991
Samacsys Pin Count3
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategorySOT23 (3-Pin)
Samacsys Footprint NameSOT-23 (TO-236)
Samacsys Released Date2015-07-01 13:10:22
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
1
2
3
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−65 to +150
mW
mW/°C
°C/W
°C
6x
M
G
= Device Code
x = A, B, or C
= Date Code*
= Pb−Free Package
556
mW
mW/°C
°C/W
1
6x M
G
G
Max
Unit
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 15
Publication Order Number:
BC817−16LT1/D

BC817-40LT3G Related Products

BC817-40LT3G PRA100C8-2K34BLGT31 SBC817-40LT3G BC817-16LT1G BC817-40LT1G
Description Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, Vceo=45V, Ic=500mA, hfe=250~600 Array/Network Resistor, Bussed, Thin Film, 0.1W, 2340ohm, 50V, 0.1% +/-Tol, -10,10ppm/Cel, 3206, DC reverse withstand voltage (Vr): 45V Average rectified current (Io): 500mA Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, Vceo=45V, Ic=500mA, hfe=100~250 Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, Vceo=45V, Ic=500mA, hfe=250~600
package instruction SMALL OUTLINE, R-PDSO-G3 SMT, 3206 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code e3 e4 e3 e3 e3
Number of terminals 3 16 3 3 3
Maximum operating temperature 150 °C 155 °C 150 °C 150 °C 150 °C
Package form SMALL OUTLINE SMT SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Terminal surface Tin (Sn) Gold (Au) - with Nickel (Ni) barrier Tin (Sn) Tin (Sn) Tin (Sn)
Brand Name ON Semiconductor - ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free - Lead free Lead free Lead free
Parts packaging code SOT-23 - SOT-23 SOT-23 SOT-23
Contacts 3 - 3 3 3
Manufacturer packaging code 318-08 - 318-08 318-08 318-08
Samacsys Confidence 3 - - 3 3
Samacsys Status Released - - Released Released
Samacsys PartID 170991 - - 224462 224465
Samacsys Pin Count 3 - - 3 3
Samacsys Part Category Integrated Circuit - - Transistor BJT NPN Transistor BJT NPN
Samacsys Package Category SOT23 (3-Pin) - - SOT23 (3-Pin) SOT23 (3-Pin)
Samacsys Footprint Name SOT-23 (TO-236) - - SOT−23 (TO−236) CASE 318−08 ISSUE AS- SOT-23 (TO-236) CASE 318-08
Samacsys Released Date 2015-07-01 13:10:22 - - 2015-07-24 08:59:13 2015-07-24 09:01:06
Is Samacsys N - N N N
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 45 V - 45 V 45 V 45 V
Configuration SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 250 - 250 100 250
JEDEC-95 code TO-236 - TO-236AB TO-236 TO-236
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 - 1 1 1
Number of components 1 - 1 1 1
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Peak Reflow Temperature (Celsius) 260 - 260 260 260
Polarity/channel type NPN - NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W - 0.3 W 0.3 W 0.3 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 - 40 40 40
Transistor component materials SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz - 100 MHz 100 MHz 100 MHz
Base Number Matches 1 - 1 1 1
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