EEWORLDEEWORLDEEWORLD

Part Number

Search

DTC143ZET1G

Description
Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA
CategoryDiscrete semiconductor    The transistor   
File Size126KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

DTC143ZET1G Online Shopping

Suppliers Part Number Price MOQ In stock  
DTC143ZET1G - - View Buy Now

DTC143ZET1G Overview

Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA

DTC143ZET1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSC-75
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code463-01
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Confidence2
Samacsys StatusReleased
Samacsys PartID411197
Samacsys Pin Count3
Samacsys Part CategoryTransistor BJT NPN
Samacsys Package CategorySOT23 (3-Pin)
Samacsys Footprint NameSC-75 SOT-416 CASE 463-01 ISSUE F
Samacsys Released Date2018-02-26 20:21:44
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 0.1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MUN2233, MMUN2233L,
MUN5233, DTC143ZE,
DTC143ZM3, NSBC143ZF3
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and
a base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
XX M
1
XM 1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−1123
CASE 524AA
STYLE 1
XXX
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
1
October, 2016 − Rev. 6
Publication Order Number:
DTC143Z/D

DTC143ZET1G Related Products

DTC143ZET1G MUN2233T1G MUN5233T1G MMUN2233LT1G
Description Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA Rated power: 230mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN - Pre-biased 50V 100mA Rated power: 202mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - pre-biased NPN band-stop transistor, 50V, 100mA, R=4.7K/47K Rated power: 246mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN transistor
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free
Parts packaging code SC-75 SC-59 SC-70 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Manufacturer packaging code 463-01 318D-04 419-04 318-08
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 1 week 1 week
Other features BUILT-IN BIAS RESISTOR RATIO IS 0.1 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 80 80
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.338 W 0.31 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 - 1
I am learning circuits from scratch and would like to ask you a very basic question...
The circuit is as shown above. I would like to ask you, why do the two voltmeters show 9V instead of 3V?...
arcia Analog electronics
EEWORLD University ---- Digikey KOL Series: Welcome to the wonderful world of MicroPython
Digikey KOL Series: Welcome to the wonderful world of MicroPython : https://training.eeworld.com.cn/course/5746This video tutorial includes an introduction to MicroPython, a comparison with traditiona...
hi5 Integrated technical exchanges
AD8065
[i=s]This post was last edited by paulhyde on 2014-9-15 08:56[/i] AD8065 information, with many pictures, not in Chinese....
274131487 Electronics Design Contest
【R7F0C809】EX01-Counter function (add one, subtract one, clear)
[i=s]This post was last edited by slotg on 2015-10-31 20:44[/i] The an_r01an2006cc0110_r7f0c809_io.zip provided by the official website is a R7F0C809 key scan with 4-digit 8-segment display routine. A...
slotg Renesas Electronics MCUs
Is anyone familiar with building a development platform for LPC2134FBD64?
This is a Philips ARM7 chip. I hope to make a development board on it. I don't know if any expert has used it before. I hope to give me some advice. I want to build a development platform, including S...
shinecx2 Embedded System
Center-tapped transformer and two coils in series
What is the difference between a center-tapped transformer and two coils connected in series?...
bigbat Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 335  2066  56  1964  2630  7  42  2  40  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号