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BC846BPDW1T1G

Description
Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN, PNP
CategoryDiscrete semiconductor    The transistor   
File Size136KB,17 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC846BPDW1T1G Overview

Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN, PNP

BC846BPDW1T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging code419B-02
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Samacsys DescriptionNULL
Maximum collector current (IC)0.1 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage65 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.38 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.65 V
BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
www.onsemi.com
SOT−363
CASE 419B
STYLE 1
(3)
(2)
(1)
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS − NPN
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
65
45
30
V
CBO
80
50
30
V
EBO
I
C
I
CM
6.0
100
200
V
mAdc
mAdc
V
Value
Unit
V
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
6
XX MG
G
1
XX = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Mark Package
BB
BB
BF
BF
BF
BF
BL
Shipping
MAXIMUM RATINGS − PNP
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
−65
−45
−30
V
CBO
−80
−50
−30
V
EBO
I
C
I
CM
−6.0
−100
−200
V
mAdc
mAdc
V
Value
Unit
V
BC846BPDW1T1G,
SBC846BPDW1T1G
SBC846BPDW1T2G
BC847BPDW1T1G
SBC847BPDW1T1G
SBC847BPDW1T3G
BC847BPDW1T2G
BC848CPDW1T1G
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
10,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 12
Publication Order Number:
BC846BPDW1T1/D

BC846BPDW1T1G Related Products

BC846BPDW1T1G SBC846BPDW1T1G BC847BPDW1T1G SBC847BPDW1T1G
Description Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN, PNP Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN, PNP Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN, PNP Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN, PNP NPN, PNP, 40V, 100mA
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6
Manufacturer packaging code 419B-02 419B-02 419B-02 419B-02
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Factory Lead Time 8 weeks 8 weeks 1 week 8 weeks
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 4.5 pF 4.5 pF 4.5 pF 4.5 pF
Collector-emitter maximum voltage 65 V 65 V 45 V 45 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 200 200 200 200
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 2 2 2 2
Number of terminals 6 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP
Maximum power dissipation(Abs) 0.38 W 0.38 W 0.38 W 0.38 W
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED 40 NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.65 V 0.65 V 0.65 V 0.65 V
Samacsys Description NULL NPN PNP Bipolar Transistor NULL -
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