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BC807-16LT1G

Description
Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP PNP,-45V,-500mA
CategoryDiscrete semiconductor    The transistor   
File Size131KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC807-16LT1G Overview

Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP PNP,-45V,-500mA

BC807-16LT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID224456
Samacsys Pin Count3
Samacsys Part CategoryTransistor
Samacsys Package CategorySOT23 (3-Pin)
Samacsys Footprint NameSOT-23 (TO-236) CASE 318-08
Samacsys Released Date2015-07-24 08:55:11
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC807-16L, BC807-25L,
BC807-40L
General Purpose
Transistors
PNP Silicon
Features
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−50
−5.0
−500
Unit
V
V
V
mAdc
1
2
SOT−23
CASE 318
STYLE 6
3
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
5xx M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
5xx = Device Code
xx = A1, B1, or C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 14
Publication Order Number:
BC807−16LT1/D

BC807-16LT1G Related Products

BC807-16LT1G BC807-16LT3G BC807-25LT1G BC807-40LT1G SBC807-40LT1G SBC807-25LT1G BC807-25LT3G
Description Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP PNP,-45V,-500mA Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP PNP,-45V,-500mA Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP PNP, Vceo=-45V, Ic=-500mA, hfe=160~400 Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP PNP 45V 500mA
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3 3
Manufacturer packaging code 318-08 318-08 318-08 318-08 318-08 318-08 318-08
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 1 week 1 week 4 weeks 4 weeks 1 week
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 160 250 250 160 160
JEDEC-95 code TO-236 TO-236 TO-236 TO-236 TO-236AB TO-236AB TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 NOT SPECIFIED NOT SPECIFIED 260
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W 0.225 W 0.3 W 0.3 W 0.225 W
surface mount YES YES YES YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 NOT SPECIFIED NOT SPECIFIED 40
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 - - SOT-23
Is Samacsys N N N - - - N
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified
Base Number Matches 1 1 1 - 1 - 1

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