BC856BDW1T1G,
SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
(3)
SOT−363/SC−88
CASE 419B
STYLE 1
(2)
(1)
www.onsemi.com
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
Collector −Base Voltage
BC856, SBC856
BC857, SBC857
BC858
Emitter −Base Voltage
Collector Current −Continuous
Collector Current − Peak
Symbol
V
CEO
−65
−45
−30
V
CBO
−80
−50
−30
V
EBO
I
C
I
C
−5.0
−100
−200
V
mAdc
mAdc
M
G
V
3x
1
= Specific Device Code
x = B, F, G, or L
(See Ordering Information)
= Date Code
= Pb−Free Package
Value
Unit
V
6
3x MG
G
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
Symbol
P
D
Max
380
250
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
°C
Unit
mW
mW
mW/°C
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
August, 2016 − Rev. 10
Publication Order Number:
BC856BDW1T1/D
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
Collector −Emitter Breakdown Voltage
(I
C
= −10
mA,
V
EB
= 0)
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
Collector −Base Breakdown Voltage
(I
C
= −10
mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
Emitter −Base Breakdown Voltage
(I
E
= −1.0
mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
Collector Cutoff Current
(V
CB
= −30 V)
(V
CB
= −30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10
mA,
V
CE
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
(I
C
= −2.0 mA, V
CE
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
Collector −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
100
C
ob
−
NF
−
−
10
−
4.5
dB
−
−
pF
MHz
h
FE
−
−
220
420
V
CE(sat)
−
−
V
BE(sat)
−
−
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
−0.7
−0.9
−
−
V
−
−
−0.3
−0.65
V
150
270
290
520
−
−
475
800
V
−
V
(BR)CEO
−65
−45
−30
V
(BR)CES
−80
−50
−30
V
(BR)CBO
−80
−50
−30
V
(BR)EBO
−5.0
−5.0
−5.0
I
CBO
−
−
−
−
−15
−4.0
nA
mA
−
−
−
−
−
−
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
www.onsemi.com
2
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC856/SBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
-0.6
V
BE
@ V
CE
= -5.0 V
-0.4
-0.2
0.2
0
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
Figure 1. DC Current Gain
Figure 2. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.6
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.4
-1.2
-1.8
q
VB
for V
BE
-55°C to 125°C
-0.8
-2.2
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= -5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
20
-0.5
-1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current−Gain − Bandwidth Product
www.onsemi.com
3
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC857/SBC857/BC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
Figure 7. Normalized DC Current Gain
Figure 8. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 9. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 10. Base−Emitter Temperature
Coefficient
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain − Bandwidth Product
www.onsemi.com
4
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
1.0
D = 0.5
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.2
0.1
0.05
0.02
0.01
0.01
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
0.001
0
1.0
10
100
t, TIME (ms)
1.0 k
10 k
100 k
1.0 M
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC
(t)
0.1
Figure 13. Thermal Response
-200
1s
IC, COLLECTOR CURRENT (mA)
-100
-50
T
A
= 25°C
T
J
= 25°C
3 ms
-10
-5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
The safe operating area curves indicate I
C
−V
CE
limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided T
J(pk)
≤
150°C.
T
J(pk)
may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
-2.0
-1.0
Figure 14. Active Region Safe Operating Area
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
