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BF720T1G

Description
Rated power: 1.5W Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 300V Transistor type: NPN
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BF720T1G Overview

Rated power: 1.5W Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 300V Transistor type: NPN

BF720T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-261AA
package instructionHALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
Base Number Matches1
BF720T1G,
SBF720T1G,
BF720T3G
NPN Silicon Transistor
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
http://onsemi.com
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
NPN SILICON TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Collector
−Emitter
Voltage
Emitter
−Base
Voltage
Collector Current
Total Power Dissipation up to T
A
= 25C
Storage Temperature Range
Junction Temperature
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
C
P
D
T
stg
T
J
Value
300
300
300
5.0
100
1.5
−65
to +150
150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
W
C
C
EMITTER 3
BASE
1
COLLECTOR 2, 4
SOT−223 (TO−261)
CASE 318E
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient (Note 1)
Symbol
R
qJA
Max
83.3
Unit
C/W
MARKING DIAGRAM
AYW
DC
G
G
1
A
Y
W
DC
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
0.059 in.; mounting pad for the collector lead min. 0.93 in
2
.
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BF720T1G
SBF720T1G
BF720T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1,000 / Tape & Reel
1,000 / Tape & Reel
4,000 / Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BF720T1/D
November, 2011
Rev. 8
1
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