(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Tstg
T
J
dv/dt
Value
40
Unit
V
5
10
190
−65
to +150
−65
to +150
10,000
A
A
A
°C
°C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
Symbol
R
qJL
R
qJA
Value
12
111
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 5.0 A, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= 25°C)
(Rated dc Voltage, T
C
= 100°C)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
Symbol
V
F
i
R
Value
0.50
0.3
15
Unit
V
mA
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2
MBRS540T3G, NRVBS540T3G
TYPICAL CHARACTERISTICS
10
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
J
= 125°C
1
T
J
= 125°C
1
T
J
= 100°C
T
J
= 25°C
T
J
=
−40°C
T
J
=
−55°C
0.20
0.30
0.40
0.50
0.60
0.70
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
T
J
=
−40°C
T
J
= 100°C T
J
= 25°C
0.20
0.30
0.40
T
J
=
−55°C
0.50
0.60
0.1
0.10
0.1
0.10
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
I
R
, REVERSE CURRENT (A)
10E−3
1E−3
T
J
= 125°C
T
J
= 100°C
I
R
, MAXIMUM REVERSE CURRENT (A)
100E−3
100E−3
T
J
= 125°C
10E−3
T
J
= 100°C
1E−3
T
J
= 25°C
T
J
=
−55°C
10E−6
1E−6
0
100E−6
10E−6
1E−6
T
J
= 25°C
T
J
=
−55°C
100E−6
100E−9
10E−9
1E−9
0
100E−12
10
20
30
V
R
, REVERSE VOLTAGE (V)
40
10
20
30
V
R
, REVERSE VOLTAGE (V)
40
Figure 3. Typical Reverse Current
9
8
I
O
, AVERAGE FORWARD
CURRENT (A)
7
6
5
4
3
2
1
0
25
50
75
100
125
150
SQUARE WAVE
I
pk
/I
O
=
p
I
pk
/I
O
= 5
dc
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
Figure 4. Maximum Reverse Current
P
FO
, AVERAGE POWER DISSIPATION (W)
freq = 20 kHz
SQUARE
WAVE
dc
I
pk
/I
O
=
p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
2
3
4
5
6
7
8
9
I
O
, AVERAGE FORWARD CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRS540T3G, NRVBS540T3G
TYPICAL CHARACTERISTICS
T
J
, DERATED OPERATING TEMPERATURE (°C)
1000
T
J
= 25
°C
125
115
105
95
85
75
65
55
0
5
R
qJA
= 136
°C/W
35
10
15
20
25
30
V
R
, DC REVERSE VOLTAGE (V)
40
45
R
qJA
= 81
°C/W
R
qJA
= 111
°C/W
R
qJA
= 12
°C/W
C, CAPACITANCE (pF)
R
qJA
= 47
°C/W
100
0
5
10
15
20
25
30
V
R
, REVERSE VOLTAGE (V)
35
40
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating
r(t), TRANSIENT THERMAL RESPONSE (C/W)
1000
100 D = 0.5
0.2
0.1
P
(pk)
Test Type > min pad 1 oz
R
qJC
= min pad 1 oz C/W
10
0.05
0.02
1 0.01
SINGLE PULSE
0.0001
0.001
0.01
0.1
t, TIME (s)
1
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
0.1
0.00001
100
1000
Figure 9. Thermal Response
−
MBRS540T3G, NRVBS540T3G on min pad
r(t), TRANSIENT THERMAL RESPONSE (C/W)
100
D = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
SINGLE PULSE
0.0001
0.001
0.01
0.1
t, TIME (s)
1
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
100
1000
P
(pk)
Test Type > min pad 1 oz
R
qJC
= min pad 1 oz C/W
0.1
0.00001
Figure 10. Thermal Response
−
MBRS540T3G, NRVBS540T3G on 1” pad
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MBRS540T3G, NRVBS540T3G
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
MILLIMETERS
NOM
MAX
2.13
2.41
0.10
0.15
3.00
3.07
0.23
0.30
5.84
6.10
6.86
7.11
7.94
8.13
1.02
1.27
0.51 REF
MIN
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
INCHES
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
0.020 REF
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
b
D
A
L
L1
c
A1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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