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FDN342P
August 1999
FDN342P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Features
-2 A, -20 V. R
DS(ON)
= 0.08
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 0.13
Ω
@ V
GS
= -2.5 V.
Rugged gate rating (±12V).
High performance trench technology for extremely
low R
DS(ON)
.
Enhanced power SuperSOT
TM
-3 (SOT-23).
Applications
Load switch
Battery protection
Power management
D
D
S
SuperSOT -3
TM
G
T
A
= 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
°C
±12
-2
-10
0.5
0.46
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
FDN342P
Device
FDN342P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999
Fairchild Semiconductor Corporation
FDN342P Rev. B
FDN342P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,Referenced
to 25°C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= -12 V, V
DS
= 0 V
Min
-20
Typ
Max
Units
V
Off Characteristics
-16
-1
100
-100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µA
I
D
= -250
µA,Referenced
to 25°C
V
GS
= -4.5 V, I
D
= -2 A
V
GS
= -4.5 V, I
D
= -2 A,T
J
=125°C
V
GS
= -2.5 V, I
D
= -1.5 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -5 A
-0.6
-1.05
3
0.062
0.086
0.099
-1.5
V
mV/°C
0.08
0.14
0.13
Ω
I
D(on)
g
FS
-5
7
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V
f = 1.0 MHz
635
175
75
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, R
GEN
= 6
Ω
20
8
9
19
35
16
18
32
9
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10 V, I
D
= -2 A
V
GS
= -4.5 V,
6.3
1.5
1.7
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
-0.42
-0.7
-1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted
on a 0.02 in
2
pad of 2 oz. Cu.
b) 270°C/W when mounted
on a mininum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDN342P Rev. B
FDN342P
Typical Characteristics
20
-4.0V
-3.5V
15
-3.0V
10
-2.5V
5
-2.0V
0
0
1
2
3
4
5
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
-I
D
, DRAIN-SOURCE CURRENT (A)
1.8
V
GS
= -2.5V
1.6
-3.0V
1.4
-3.5V
1.2
1
0.8
0
4
8
12
16
20
- I
D
, DRAIN CURRENT (A)
-4.0V
-4.5V
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.3
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -2.0A
V
GS
= -4.5V
1.4
I
D
= -1A
0.2
1.2
1
0.1
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
-50
-25
0
25
50
75
100
o
0
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
8
T
A
= -55 C
25 C
125
o
C
6
-I
S
, REVERSE DRAIN CURRENT (A)
100
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
o
o
4
2
0
0.4
1.4
2.4
3.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN342P Rev. B
FDN342P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -2A
4
(continued)
1000
V
DS
= -5V
-10V
CAPACITANCE (pF)
-15V
800
C
ISS
600
f = 1MHz
V
GS
= 0 V
3
2
400
1
200
C
OSS
C
RSS
0
0
2
4
Q
g
, GATE CHARGE (nC)
6
8
0
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
20
SINGLE PULSE
R
θ
JA
=270 C/W
T
A
=25 C
POWER (W)
1ms
10ms
o
o
-I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
16
12
1
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10s
DC
100ms
1s
8
0.1
4
0
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270 °C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
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