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DTC123JET1G

Description
Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA
CategoryDiscrete semiconductor    The transistor   
File Size121KB,11 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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DTC123JET1G Overview

Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA

DTC123JET1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSC-75
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code463-01
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 0.047
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
MUN2234, MMUN2234L,
MUN5234, DTC124XE,
DTC124XM3, NSBC124XF3
Digital Transistors (BRT)
R1 = 22 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
8
Unit
Vdc
XX MG
G
1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Vdc
mAdc
Vdc
Vdc
XX M
1
XM 1
XXX
M
G
1
XX M
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
1
October, 2016 − Rev. 3
Publication Order Number:
DTC124X/D

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Description Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA TRANS PREBIAS NPN 50V SOT23-3 SOT-723 BIAS RESISTOR Rated power: 260mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 100mA Rated power: 260mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - pre-biased
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Manufacturer packaging code 463-01 318-08 631AA 631AA 631AA 419-04
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Factory Lead Time 8 weeks 5 weeks 8 weeks 1 week 2 weeks 1 week
Other features BUILT-IN BIAS RESISTOR RATIO IS 0.047 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT-IN BIAS RESISTOR RATIO IS 0.047 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 80 80 80 80
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING FLAT FLAT FLAT GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 - - 3 3 3
ECCN code EAR99 - - EAR99 EAR99 EAR99
JESD-609 code e3 - e3 e3 e3 e3
Humidity sensitivity level 1 - 1 1 1 1
Maximum operating temperature 150 °C - - 150 °C 150 °C 150 °C
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED 260 260 260
Maximum power dissipation(Abs) 0.3 W - - 0.6 W 0.6 W 0.15 W
Certification status Not Qualified - - Not Qualified Not Qualified Not Qualified
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature 40 - NOT SPECIFIED 40 40 40
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