NTJD5121N
60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88
Features
Power MOSFET
•
•
•
•
•
Low R
DS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
This is a Pb−Free Device
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V
(BR)DSS
60 V
R
DS(on)
MAX
1.6
W
@ 10 V
2.5
W
@ 4.5 V
I
D
Max
295 mA
Applications
•
Low Side Load Switch
•
DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
Power Dissipation
(Note 1)
Steady
State
t
≤
5s
Pulsed Drain Current
t
p
= 10
ms
I
DM
T
J
, T
STG
I
S
T
L
ESD
T
A
= 25°C
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
295
212
304
219
250
266
900
−55
to
150
210
260
2000
mA
1
mW
Unit
V
V
mA
D
2
3
G
1
2
S
1
1
SC−88 (SOT−363)
6
D
1
5
G
2
4
S
2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
TF M
G
G
1
S1 G1 D2
= Device Code
= Date Code
= Pb−Free Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Gate−Source ESD Rating (HBM)
°
C
mA
°C
V
SC−88/SOT−363
CASE 419B
STYLE 26
TF
M
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
SC−88
(Pb−Free)
SC−88
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State
Junction−to−Ambient – t
≤
5 s
Symbol
R
qJA
R
qJA
Value
500
470
Unit
°C/W
NTJD5121NT1G
NTJD5121NT2G
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 4
1
Publication Order Number:
NTJD5121N/D
NTJD5121N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C
T
J
= 85°C
V
GS
= 4.5 V, V
DD
= 25 V,
I
D
= 200 mA, R
G
= 25
W
V
GS
= 4.5 V, V
DS
= 25 V,
I
D
= 200 mA
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 20 V
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 200 mA
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
22
34
34
32
ns
26
4.4
2.5
0.9
0.2
0.3
0.28
nC
pF
V
DS
= 5 V, I
D
= 200 mA
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
ref to 25°C
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
60
92
1.0
500
±10
mA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.0
1.7
4.0
1.0
1.2
80
2.5
V
mV/°C
1.6
2.5
W
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.8
0.7
1.2
V
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTJD5121N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.6
5V
I
D,
DRAIN CURRENT (A)
1.2
4.5 V
4.2 V
2.4 V
2.2 V
0.4
4V
3.8 V
3.6 V
3.4 V
3.2 V
3V
2.8 V
2.6 V
0
1
2
3
4
5
V
GS
= 10
T
J
= 25°C
I
D,
DRAIN CURRENT (A)
1.2
V
DS
≥
10 V
1
0.8
0.6
0.4
25°C
0.2
0
T
J
= 125°C
0
1
2
−55°C
3
4
5
0.8
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
2.4
V
GS
= 4.5 V
2
1.6
1.2
0.8
0.4
0
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
=
−55°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
2.4
2
1.6
1.2
0.8
0.4
0
Figure 2. Transfer Characteristics
V
GS
= 10 V
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
=
−55°C
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.4
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 500 mA
1.8
1.6
1.4
1.2
1
0.8
0.6
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D
= 0.2 A
V
GS
= 4.5 V and 10 V
2
1.6
4.5 V
I
D
= 200 mA
1.2
10 V
0.8
2
4
6
8
10
−50
−25
0
25
50
75
100
125 150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance versus
Gate−to−Source Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
NTJD5121N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
aaa H D
D
A
D
5
4
2X
H
GAGE
PLANE
6
E
1
2X
2
3
E1
L2
L
DETAIL A
aaa C
bbb H D
2X 3 TIPS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−−
0.043
−−−
0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
e
B
TOP VIEW
6X
b
ddd
A2
A
M
C A-B D
DETAIL A
6X
ccc C
SIDE VIEW
A1
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
0.30
6X
0.66
6X
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTJD5121N/D
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