BCX17LT1G, PNP
BCX18LT1G, PNP
BCX19LT1G, NPN
SBCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
www.onsemi.com
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
BCX17, BCX19
BCX18
Collector − Base Voltage
BCX17, BCX19
BCX18
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
45
25
V
CBO
50
30
V
EBO
I
C
5.0
500
Vdc
mAdc
1
XX
M
G
Vdc
Value
Unit
Vdc
1
BASE
PNP
SOT−23
(TO−236)
CASE 318−08
STYLE 6
NPN
COLLECTOR
3
1
BASE
COLLECTOR
3
2
EMITTER
2
EMITTER
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
556
Unit
mW
mW/°C
°C/W
XX M
G
G
= T1, T2 or U1
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
November, 2016 − Rev. 9
Publication Order Number:
BCX17LT1/D
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
BCX17, BCX19, SBCX19
BCX18
Collector−Emitter Breakdown Voltage
(I
C
= 10
mAdc,
I
C
= 0)
BCX17, BCX19, SBCX19
BCX18
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 150°C)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 300 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
h
FE
100
70
40
V
CE(sat)
−
V
BE(on)
−
−
1.2
−
0.62
Vdc
−
−
−
600
−
−
Vdc
−
V
(BR)CEO
45
25
V
(BR)CES
50
30
I
CBO
−
−
I
EBO
−
−
10
−
−
100
5.0
nAdc
mAdc
mAdc
−
−
−
−
−
−
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BCX17LT1G
NSVBCX17LT1G*
BCX18LT1G
BCX19LT1G
SBCX19LT1G*
Specific Marking
T1
T1
T2
U1
U1
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
www.onsemi.com
2
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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