BCW70LT1G
General Purpose Transistor
PNP Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
EBO
I
C
Value
−45
−5.0
−100
Unit
Vdc
Vdc
mAdc
1
BASE
COLLECTOR
3
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
H2 M
G
G
1
H2 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW70LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1999
1
November, 2016 − Rev. 4
Publication Order Number:
BCW70LT1/D
BCW70LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −2.0 mAdc, I
B
= 0)
Collector−Emitter Breakdown Voltage
(I
C
= −100
mAdc,
V
EB
= 0)
Emitter−Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −20 Vdc, I
E
= 0)
(V
CB
= −20 Vdc, I
E
= 0, T
A
= 100°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(I
E
= 0, V
CB
= −10 Vdc, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
obo
−
N
F
−
10
dB
7.0
pF
h
FE
215
V
CE(sat)
−
V
BE(on)
−0.6
−0.75
Vdc
−0.3
Vdc
500
−
V
(BR)CEO
−45
V
(BR)CES
−50
V
(BR)EBO
−5.0
I
CBO
−
−
−100
−10
nAdc
mAdc
−
Vdc
−
Vdc
−
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BCW70LT1G
TYPICAL NOISE CHARACTERISTICS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
mA
30
mA
3.0
2.0
1.0 mA
100
mA
300
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
mA
100
mA
30
mA
10
mA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
+
20 log10
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200 300
500 700 1.0 k
I
C
, COLLECTOR CURRENT (mA)
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I = Noise Current of the Transistor referred to the input.
n
(Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R = Source Resistance (Ohms)
S
Figure 5. Wideband
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BCW70LT1G
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
IC, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
300
mA
60
I
B
= 400
mA
350
mA
250
mA
200
mA
150
mA
0.6
0.4
40
100
mA
50
mA
0.2
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
- 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
- 55°C to 25°C
25°C to 125°C
2.4
0.1
0.5
1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
500
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0.5 V
10
7.0
5.0
1.0
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
-1.0
t
s
V
CC
= - 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
20 30
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50 70
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
I
C
, COLLECTOR CURRENT (mA)
- 50 - 70 -100
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
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BCW70LT1G
TYPICAL DYNAMIC CHARACTERISTICS
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
500
T
J
= 25°C
300
200
V
CE
= 20 V
5.0 V
C, CAPACITANCE (pF)
10
T
J
= 25°C
7.0
C
ib
5.0
3.0
2.0
C
ob
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
Figure 13. Capacitance
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
P
(pk)
0.02
0.01
t
1
SINGLE PULSE
t
2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
FIGURE 16
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN-569)
Z
qJA(t)
= r(t) w R
qJA
T
J(pk)
- T
A
= P
(pk)
Z
qJA(t)
5.0 k 10 k 20 k
50 k 100
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
Figure 14. Thermal Response
10
4
V
CC
= 30 V
IC, COLLECTOR CURRENT (nA)
10
3
10
2
10
1
10
0
10
-1
10
-2
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
To find Z
qJA(t)
, multiply the value obtained from Figure 14 by the
steady state value R
qJA
.
Example:
Dissipating 2.0 watts peak under the following conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT
= r(t) x P
(pk)
x R
qJA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
-4
0
-2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
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