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CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
October 2014
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Features
■
High BV
CEO
: 70 V Minimum (CNY17XM, CNY17FXM,
■
■
■
Description
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
■
MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
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