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NTUD3170NZT5G

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 220mA Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 1.5Ω @ 100mA, 4.5V Maximum power dissipation ( Ta=25°C): 125mW Type: Dual N-channel Dual N-channel, 20V, 220mA
CategoryDiscrete semiconductor    The transistor   
File Size61KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTUD3170NZT5G Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 220mA Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 1.5Ω @ 100mA, 4.5V Maximum power dissipation ( Ta=25°C): 125mW Type: Dual N-channel Dual N-channel, 20V, 220mA

NTUD3170NZT5G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Manufacturer packaging code527AD
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.22 A
Maximum drain current (ID)0.22 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
NTUD3170NZ
Small Signal MOSFET
20 V, 220 mA, Dual N−Channel, 1.0 mm x
1.0 mm SOT−963 Package
Features
Dual N−Channel MOSFET
Offers a Low R
DS(ON)
Solution in the Ultra Small 1.0 x 1.0 mm
Package
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics
This is a Pb−Free Device
Applications
www.onsemi.com
V
(BR)DSS
20 V
R
DS(ON)
MAX
1.5
W
@ 4.5 V
2.0
W
@ 2.5 V
3.0
W
@ 1.8 V
4.5
W
@ 1.5 V
I
D
Max
0.22 A
General Purpose Interfacing Switch
Optimized for Power Management in Ultra Portable Equipment
Analog Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Steady
State
t
v
5s
Pulsed Drain Current
t
p
= 10
ms
I
DM
T
J
,
T
STG
I
S
T
L
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
200
800
−55 to
150
200
260
mA
°C
mA
°C
I
D
Symbol
V
DSS
V
GS
Value
20
±8
220
160
280
125
mW
mA
Unit
V
V
D1
D2
G1
G2
S1
N−Channel
MOSFET
S2
PINOUT: SOT−963
S
1
1
6 D
1
G
1
2
5 G
2
D
2
3
Top View
4 S
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width
v300
ms,
duty cycle
v2%
MARKING
DIAGRAM
3M
1
SOT−963
CASE 527AD
3
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
1
May, 2017 − Rev. 1
Publication Order Number:
NTUD3170NZ/D
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