FSBB20CH60 Motion SPM® 3 Series
January 2014
FSBB20CH60
Motion SPM
®
3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al
2
O
3
DBC Sub-
strate
• Dedicated Vs Pins Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2500 V
rms
/ min.
General Description
FSBB20CH60 is a Motion SPM
®
3 module providing a
fully-featured, high-performance inverter output stage
for AC Induction, BLDC, and PMSM motors. These mod-
ules integrate optimized gate drive of the built-in IGBTs
to minimize EMI and losses, while also providing multi-
ple on-module protection features including under-volt-
age lockouts, over-current shutdown, and fault reporting.
The built-in, high-speed HVIC requires only a single sup-
ply voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9035 - Motion SPM 3 Series Ver.2 User’s Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBB20CH60
Device Marking
FSBB20CH60
Package
SPMCA-027
Packing Type
Rail
Quantity
10
©2006 Fairchild Semiconductor Corporation
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FSBB20CH60 Rev. C6
FSBB20CH60 Motion SPM® 3 Series
Integrated Power Functions
• 600 V - 20 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 10 and 11.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
13.7
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(21) N
U
(22) N
V
19.2
(23) N
W
(24) U
Case Temperature (T )
C
Detecting Point
(25) V
(26) W
DBC Substrate
(27) P
Figure 2. Top View
©2006 Fairchild Semiconductor Corporation
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FSBB20CH60 Rev. C6
FSBB20CH60 Motion SPM® 3 Series
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
V
CC(L)
COM
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
N
U
N
V
N
W
U
V
W
P
Common Supply Ground
Signal Input for Low-Side U-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side W-Phase
Fault Output
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving
Capacitor for Fault Output Duration Selection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Signal Input for High-Side U-Phase
High-Side Bias Voltage for U-Phase IC
High-Side Bias Voltage for U-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
Signal Input for High-Side V-Phase
High-Side Bias Voltage for V-Phase IC
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
Signal Input for High-Side W Phase
High-Side Bias Voltage for W-Phase IC
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for W-Phase IGBT Driving
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Output for U-Phase
Output for V-Phase
Output for W-Phase
Positive DC-Link Input
©2006 Fairchild Semiconductor Corporation
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FSBB20CH60 Rev. C6
FSBB20CH60 Motion SPM® 3 Series
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) V
B(W )
(18) V
CC(W H)
VB
VCC
COM
IN
VS
W (26)
OUT
(17) IN
(W H)
(20) V
S(W )
(15) V
B(V)
(14) V
CC(VH)
VB
VCC
COM
IN
VS
V (25)
OUT
(13) IN
(VH)
(16) V
S(V)
(11) V
B(U)
(10) V
CC(UH)
VB
VCC
COM
IN
VS
U (24)
OUT
(9) IN
(UH)
(12) V
S(U)
(8) C
SC
(7) C
FO D
(6) V
FO
C(SC)
C(FOD)
VFO
OUT(W L)
N
W
(23)
(5) IN
(W L)
(4) IN
(VL)
(3) IN
(UL)
(2) CO M
IN(W L) OUT(VL)
IN(VL)
IN(UL)
COM
OUT(UL)
V
SL
N
U
(21)
N
V
(22)
(1) V
CC(L)
VCC
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
©2006 Fairchild Semiconductor Corporation
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FSBB20CH60 Rev. C6
FSBB20CH60 Motion SPM® 3 Series
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
2nd Notes:
unless otherwise specified.)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C
Conditions
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
Rating
450
500
600
20
40
61
-20 ~ 125
Unit
V
V
V
A
A
W
°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per Chip
(2nd Note 1)
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM
®
3 product is 150C (at T
C
100C). However, to insure safe operation of the
Motion SPM 3 product, the average junction temperature should be limited to T
J(ave)
125C (at T
C
100C)
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-Side Control Bias
Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Conditions
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
-
COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Rating
20
20
-0.3 ~ 17
-0.3 ~ V
CC
+0.3
5
-0.3 ~ V
CC
+0.3
Unit
V
V
V
V
mA
V
Current-Sensing Input Voltage Applied between C
SC
- COM
Total System
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5 V
T
J
= 125°C, Non-Repetitive, < 2
s
-20CT
J
125C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Rating
400
-20 ~ 100
-40 ~ 125
2500
Unit
V
°C
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
2nd Notes:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Parameter
Junction to Case Thermal
Resistance
Condition
Inverter IGBT Part (per 1 / 6 module)
Inverter FWD Part (per 1 / 6 module)
Min.
-
-
Typ. Max.
-
-
1.63
2.55
Unit
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
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FSBB20CH60 Rev. C6
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