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FDP047AN08A0 / FDH047AN08A0
— N-Channel
PowerTrench
®
MOSFET
October 2013
FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench
®
MOSFET
75 V,
80 A, 4.7 mΩ
Features
• R
DS(ON)
= 4.0 m
Ω
(Typ.), V
GS
= 10 V, I
D
= 80 A
• Q
g
(tot) = 92 nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
rr
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GD
S
TO-220
G
G
D
S
TO-247
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 144
o
C, V
GS
= 10V)
Parameter
FDP047AN08A0
FDH047AN08A0
75
±20
80
15
Figure 4
475
310
2.0
-55 to 175
Unit
V
V
A
A
A
mJ
W
W/
o
C
o
I
D
E
AS
P
D
T
J
, T
STG
Pulsed
Continuous (T
C
= 25
o
C, V
GS
= 10V, with R
θJA
= 62
o
C/W)
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case, Max. TO-220, TO-247
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
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