BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
COLLECTOR
3
1
BASE
2
EMITTER
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
45
50
6.0
100
Unit
V
V
V
mAdc
3
2
1
CASE 463
SC−75/SOT−416
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0
×
1.0 in pad.
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−55 to
+150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
XXMG
G
XX = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 3
Publication Order Number:
BC847ATT1/D
BC847ATT1, BC847BTT1, BC847CTT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
h
FE
BC847A
BC847B
BC847C
BC847A
BC847B
BC847C
V
CE(sat)
V
BE(sat)
V
BE(on)
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
V
(BR)CEO
BC847 Series
V
(BR)CES
BC847 Series
V
(BR)CBO
BC847 Series
V
(BR)EBO
BC847 Series
I
CBO
6.0
−
−
−
−
−
−
15
5.0
nA
mA
50
−
−
V
50
−
−
V
45
−
−
V
V
Symbol
Min
Typ
Max
Unit
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC847ATT1, BC847BTT1, BC847CTT1
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
1.0
20
2.0
5.0 10
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
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3
BC847ATT1, BC847BTT1, BC847CTT1
BC847
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 5. Normalized Thermal Response
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
400
300
200
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
2.0
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Capacitances
Figure 7. Current−Gain − Bandwidth Product
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4
BC847ATT1, BC847BTT1, BC847CTT1
ORDERING INFORMATION
Device
BC847ATT1
BC847BTT1
BC847BTT1G
NSVBC847BTT1G*
BC847CTT1G
Marking
1E
1F
1F
1F
1G
Package
SC−75/SOT−416
SC−75/SOT−416
SC−75/SOT−416
(Pb−Free)
SC−75/SOT−416
(Pb−Free)
SC−75/SOT−416
(Pb−Free)
3,000 / Tape & Reel
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
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