BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
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•
High DC Current Gain − h
FE
= 2500 (typ.) at I
C
= 4.0
•
Collector−Emitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
•
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (max) at I
C
= 3.0 Adc
− BDX33B, 33C/34B, 34C
•
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Emitter−Base Voltage
Collector Current
Continuous
Peak
Base Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
80
100
V
CB
80
100
V
EB
I
C
5.0
10
15
0.25
70
0.56
−65 to +150
Vdc
Adc
Vdc
Value
Unit
Vdc
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
I
B
P
D
T
J
, T
stg
Adc
W
W/°C
°C
BDX3xyG
AY WW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BDX3xy =
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.78
Unit
°C/W
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 14
Publication Order Number:
BDX33B/D
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
80
PD, POWER DISSIPATION (WATTS)
60
40
20
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0, R
BE
= 100)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0, V
BE
= 1.5 Vdc)
Collector Cutoff Current
(V
CE
= 1/2 rated V
CEO
, I
B
= 0)
Collector Cutoff Current
(V
CB
= rated V
CBO
, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 6.0 mAdc)
Base−Emitter On Voltage
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc)
Diode Forward Voltage
(I
C
= 8.0 Adc)
h
FE
BDX33B, 33C/34B, 34C
V
CE(sat)
BDX33B, 33C/34B, 34C
V
BE(on)
BDX33B, 33C/34B, 34C
V
F
−
4.0
Vdc
−
2.5
Vdc
−
2.5
Vdc
750
−
−
V
CEO(sus)
BDX33B/BDX34B
BDX33C/BDX34C
V
CER(sus)
BDX33B/BDX34B
BDX33C/BDX33C
V
CEX(sus)
BDX33B/BDX34B
BDX33C/BDX34C
I
CEO
T
C
= 25°C
T
C
= 100°C
I
CBO
T
C
= 25°C
T
C
= 100°C
I
EBO
−
−
−
1.0
5.0
10
mAdc
−
−
0.5
10
mAdc
80
100
−
−
mAdc
80
100
−
−
Vdc
80
100
−
−
Vdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
0.05
0.02
t
1
SINGLE PULSE
t
2
SINGLE
PULSE
P
(pk)
R
qJC
(t) = r(t) R
qJC
R
qJC
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
50
100
200 300
500
1000
D = 0.5
0.2
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
Figure 1. Thermal Response
20
10
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
BDX34B
BDX34C
2.0 3.0
5.0 7.0
10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
T
C
= 25°C
5.0 ms
1.0 ms
dc
500
ms
20
10
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
T
C
= 25°C
5.0 ms
1.0 ms
dc
500
ms
100
ms
100
ms
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
BDX33B
BDX33C
2.0 3.0
5.0 7.0
10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
0.05
0.02
1.0
0.05
0.02
1.0
Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 3 is based on T
J(pk)
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
PNP
NPN
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
T
J
= 25°C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
= 150°C; T
C
is variable depending on conditions. Second
breakdown pulse limits are valid for duty cycles to 10%
provided T
J(pk)
= 150°C. T
J(pk)
may be calculated from the
data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
100
70
50
PNP
NPN
0.2
C
ib
C
ob
30
0.1
0.5
1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
Figure 3. Small−Signal Current Gain
Figure 4. Capacitance
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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
NPN
BDX33B, 33C
20,000
V
CE
= 4.0 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
- 55°C
500
300
200
T
J
= 150°C
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
- 55°C
25°C
T
J
= 150°C
20,000
V
CE
= 4.0 V
PNP
BDX34B, 34C
25°C
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 5. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 2.0 A
2.2
4.0 A
6.0 A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 2.0 A
2.2
4.0 A
6.0 A
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
I
B
, BASE CURRENT (mA)
10
20
30
Figure 6. Collector Saturation Region
3.0
T
J
= 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3.0
T
J
= 25°C
2.5
2.0
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4.0 V
1.0
V
CE(sat)
@ I
C
/I
B
= 250
2.0
1.5
1.5
V
BE
@ V
CE
= 4.0 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
1.0
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages
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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
ORDERING INFORMATION
Device
BDX33BG
BDX33CG
BDX34BG
BDX34CG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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