FNA41560T2 Motion SPM 45
®
Series
August 2017
FNA41560T2
Motion SPM
®
45 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2000 V
rms
/ min.
General Description
FNA41560T2 is a Motion SPM
®
45 module providing a
fully-featured, high-performance inverter output stage
for AC Induction, BLDC, and PMSM motors. These mod-
ules integrate optimized gate drive of the built-in IGBTs
to minimize EMI and losses, while also providing multi-
ple on-module protection features including under-volt-
age lockouts, over-current shutdown, thermal monitoring
of drive IC, and fault reporting. The built-in, high-speed
HVIC requires only a single supply voltage and trans-
lates the incoming logic-level gate inputs to the high-volt-
age, high-current drive signals required to properly drive
the module's internal IGBTs. Separate negative IGBT
terminals are available for each phase to support the
widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9084 - Smart Power Module, Motion SPM® 45 H
V3 Series User’s Guilde
• AN-9072 - Smart Power Module Motion SPM® in
SPM45H Thermal Performance Information
• AN-9071 - Smart Power Module Motion SPM® in
SPM45H Mounting Guidance
• AN-9760 - PCB Design Guidance for SPM®
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNA41560T2
Device Marking
FNA41560T2
Package
SPMAB-C26
Packing Type
Rail
Quantity
12
©2016 Semiconductor
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FNA41560T2 Rev.
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FNA41560T2 Motion SPM 45
®
Series
Integrated Power Functions
• 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2016 Semiconductor
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FNA41560T2 Rev.1.1
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FNA41560T2 Motion SPM 45
®
Series
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Pin Name
V
TH
R
TH
P
U
V
W
N
U
N
V
N
W
C
SC
V
FO
IN
(WL)
IN
(VL)
IN
(UL)
COM
V
DD(L)
V
DD(H)
IN
(WH)
IN
(VH)
IN
(UH)
V
S(W)
V
B(W)
V
S(V)
V
B(V)
V
S(U)
V
B(U)
Thermistor Bias Voltage
Pin Description
Series Resistor for the Use of Thermistor (Temperature Detection)
Positive DC-Link Input
Output for U-Phase
Output for V-Phase
Output for W-Phase
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Shut Down Input for Short-circuit Current Detection Input
Fault Output
Signal Input for Low-Side W-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side U-Phase
Common Supply Ground
Low-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Common Bias Voltage for IC and IGBTs Driving
Signal Input for High-Side W-Phase
Signal Input for High-Side V-Phase
Signal Input for High-Side U-Phase
High-Side Bias Voltage Ground for W-Phase IGBT Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
©2016 Semiconductor
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FNA41560T2 Rev.1.1
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FNA41560T2 Motion SPM 45
®
Series
Internal Equivalent Circuit and Input/Output Pins
V
TH
(1)
Thermistor
R
TH
(2)
P (3)
(26) V
B(U)
(25) V
S(U)
(24) V
B(V)
(23) V
S(V)
(22) V
B(W)
UVB
UVS
VVB
VVS
WVB
OUT(UH)
UVS
U(4)
(21) V
S(W)
(20) IN
(UH)
(19) IN
(VH)
(18) IN
(WH)
(17) V
DD(H)
WVS
IN(UH)
IN(VH)
IN(WH)
VDD
COM
OUT(VH)
VVS
V (5)
OUT(WH)
WVS
W(6)
(16) V
DD(L)
(15) COM
(14) IN
(UL)
(13) IN
(VL)
(12) IN
(WL)
(11) V
FO
VDD
OUT(UL)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
CSC
OUT(VL)
N
V
(8)
N
U
(7)
(10) C
SC
OUT(WL)
N
W
(9)
Figure 3. Internal Block Diagram
Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
©2016 Semiconductor
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FNA41560T2 Rev.1.1
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FNA41560T2 Motion SPM 45
®
Series
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
unless otherwise specified.)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Conditions
Applied between P - N
U
, N
V
, N
W
Applied between P - N
U
, N
V
, N
W
T
C
= 25°C, T
J
＜
150°C
T
C
= 25°C, T
J
＜
150°C, Under 1 ms Pulse
Width (Note 4)
T
C
= 25°C per One Chip (Note 4)
Rating
450
500
600
15
30
38
- 40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
V
DD
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High - Side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current-Sensing Input Voltage
Conditions
Applied between V
DD(H)
, V
DD(L)
- COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
Rating
20
20
Unit
V
V
V
V
mA
V
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, -0.3 ~ V
DD
+ 0.3
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
pin
Applied between C
SC
- COM
-0.3 ~ V
DD
+ 0.3
1
-0.3 ~ V
DD
+ 0.3
Bootstrap Diode Part
Symbol
V
RRM
I
F
I
FP
T
J
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
Conditions
T
C
= 25°C, T
J
＜
150°C
T
C
= 25°C, T
J
＜
150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V
DD
= V
BS
= 13.5 ~ 16.5 V
T
J
= 150°C, Non-Repetitive, < 2
ms
See Figure 2
Rating
400
-40 ~ 125
-40 ~ 125
Unit
V
°C
°C
V
rms
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
2000
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (T
C
),
please refer to Figure 2.
Parameter
Junction to Case Thermal Resistance
(Note 5)
Conditions
Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
Min.
-
-
Typ.
-
-
Max.
3.20
4.00
Unit
°C / W
°C / W
©2016 Semiconductor
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FNA41560T2 Rev.1.1
www.fairchildsemi.com
www.onsemi.com
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