FOD420, FOD4208,
FOD4216, FOD4218
6-Pin DIP High dv/dt
Random Phase Triac
Drivers
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Description
The FOD420, FOD4208, FOD4216 and FOD4218 devices consist
of an infrared emitting diode coupled to a hybrid random phase triac
formed with two inverse parallel SCRs which form the triac function
capable of driving discrete triacs. The FOD4216 and FOD4218 utilize
a high efficiency infrared emitting diode which offers an improved
trigger sensitivity. These devices are housed in a standard 6−pin dual
in−line (DIP) package.
Features
6
1
PDIP6 GW
CASE 709AG
6
1
PDIP6 7.3x6.5, 2.54P
CASE 646CE
•
300 mA
peak
On−State Current
•
High Blocking Voltage
♦
•
•
•
•
•
•
•
•
•
600 V (FOD420, FOD4216)
♦
800 V (FOD4208, FOD4218)
High Trigger Sensitivity
♦
1.3 mA (FOD4216, FOD4218)
♦
2 mA (FOD420, FOD4208)
High Static dv/dt (10,000 V/ms)
Safety and Regulatory Approvals:
♦
UL1577, 5,000 VAC
RMS
for 1 Minute
♦
DIN−EN/IEC60747−5−5
These Devices are Pb−Free and are RoHS Compliant
6
1
PDIP6 7.3x6.5, 2.54P
CASE 646CF
MARKING DIAGRAM
ON
FOD420
V
X
YY
D
Applications
Solid−State Relays
Industrial Controls
Lighting Controls
Static Power Switches
AC Motor Starters
ON
= ON Semiconductor Logo
FOD420 = Device Number
V
= VDE mark. DIN EN/IEC60747−5−5
Option (only appears on component
ordered with this option)
X
= One−Digit Year Code
YY
= Digit Work Week
D
= Assembly Package Code
FUNCTIONAL SCHEMATIC
ANODE 1
6 MAIN TERM.
CATHODE 2
5 NC*
N/C 3
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
ORDERING INFORMATION
See detailed ordering and shipping information on page 8
of this data sheet.
©
Semiconductor Components Industries, LLC, 2018
May, 2019
−
Rev. 2
1
Publication Order Number:
FOD4218/D
FOD420, FOD4208, FOD4216, FOD4218
SAFETY AND INSULATION RATINGS
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
< 300 V
RMS
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Characteristics
I–IV
I–IV
55/100/21
2
175
Symbol
V
PR
Parameter
Input−to−Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
, Type and Sample
Test with t
m
= 10 s, Partial Discharge < 5 pC
Input−to−Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
, 100% Production
Test with t
m
= 1 s, Partial Discharge < 5 pC
Value
1360
1594
850
6000
≥7
≥7
≥0.4
175
400
700
>10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
°C
mA
mW
W
V
IORM
V
IOTM
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
External Clearance
DTI
T
S
I
S,INPUT
P
S,OUTPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
Output Power (Note 1)
Insulation Resistance at T
S
, V
IO
= 500 V (Note 1)
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values – maximum values allowed in the event of a failure.
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2
FOD420, FOD4208, FOD4216, FOD4218
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
Symbol
T
STG
T
OPR
T
J
T
SOL
P
D(TOTAL)
EMITTER
I
F
V
R
P
D(EMITTER)
DETECTOR
V
DRM
I
TSM
I
TM
P
D(DETECTOR)
P
D(DETECTOR)
Off−State Output Terminal Voltage
FOD420, FOD4216
FOD4208, FOD4218
Peak Non−Repetitive Surge Current (single cycle 60 Hz sine wave)
Peak On−State Current
Total Power Dissipation @ 25°C Ambient
Derate Above 25°C
All
All
All
All
600
800
3
300
450
5.9
A
peak
mA
peak
mW
mW/°C
V
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate Above 25°C
All
All
All
All
30
6
50
0.71
mA
V
mW
mW/°C
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C
Derate Above 25°C
Parameter
Device
All
All
All
All
All
All
Value
−55
to +150
−55
to +100
−55
to +125
260 for 10 sec
500
6.6
Unit
°C
°C
°C
°C
mW
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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FOD420, FOD4208, FOD4216, FOD4218
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Symbol
Parameter
Test Condition
Device
Min
Typ
Max
Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
V
F
I
R
Detector
I
D(RMS)
Peak Blocking Current,
Either Direction
I
F
= 0,
T
A
= 100°C
(Note 2)
V
D
= 600 V
V
D
= 800 V
V
D
= 600 V
V
D
= 800 V
dv/dt
Critical Rate of Rise of
Off−State Voltage
I
F
= 0 A (Note 3)
V
D
= V
DRM
FOD420,
FOD4216
FOD4208,
FOD4218
FOD420,
FOD4216
FOD4208,
FOD4218
All
10,000
−
−
V/ms
−
3
100
mA
−
3
100
mA
Input Forward Voltage
Reverse Leakage Current
I
F
= 20 mA
V
R
= 6 V
All
All
−
−
1.28
0.01
1.50
10
V
mA
I
R(RMS)
Reverse Current
T
A
= 100°C
TRANSFER CHARACTERISTICS
I
FT
LED Trigger Current
Main Terminal Voltage = 5 V (Note 4)
FOD420,
FOD4208
FOD4216,
FOD4218
V
TM
I
H
I
L
t
ON
Peak On−State Voltage,
Either Direction
Holding Current, Either
Direction
Latching Current
Turn−On Time
I
TM
= 300 mA peak, I
F
= Rated I
FT
V
T
= 3 V
V
T
= 2.2 V
PF = 1.0,
I
T
= 300 mA
V
RM
= V
DM
= 424 VAC
All
All
All
FOD420,
FOD4216,
FOD4218
FOD4208
FOD420,
FOD4216,
FOD4218
FOD4208
All
−
10
−
V/ms
−
52
−
ms
−
−
−
−
−
−
0.75
0.75
2.2
200
5
60
2.0
1.3
3
500
−
−
V
mA
mA
ms
mA
V
RM
= V
DM
= 565 VAC
t
OFF
Turn−Off Time
V
RM
= V
DM
= 424 VAC
V
RM
= V
DM
= 565 VAC
dv/dt
C
Critical Rate of Rise of
Voltage at Current
Commutation
Critical Rate of Rise of
On−State Current
Commutation
Critical Rate of Rise of
Coupled Input / Output
Voltage
V
D
= 230 V
RMS
, I
D
= 300 mA
PK
di/dt
C
V
D
= 230 V
RMS
, I
D
= 300 mA
PK
All
−
9
−
A/ms
dv(
IO
)/dt
I
T
= 0 A, V
RM
= V
DM
= 424 VAC
All
10,000
−
−
V/ms
ISOLATION CHARACTERISTICS
V
ISO
Steady State Isolation
Voltage
f = 60 Hz, t = 1 Minute (Note 5)
All
5,000
−
−
VAC
RMS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Test voltage must be applied within dv/dt rating.
3. This is static dv/dt.. Commutating dv/dt is a function of the load−driving thyristor(s) only.
4. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
.Therefore, recommended operating I
F
lies between max I
FT
(2 mA for FOD420 and FOD4208 and 1.3 mA for FOD4216 and FOD4218) and the absolute max I
F
(30 mA).
5. Isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are
common. 5,000 VAC
RMS
for 1 minute duration is equivalent to 6,000 VAC
RMS
for 1 second duration.
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4
FOD420, FOD4208, FOD4216, FOD4218
TYPICAL APPLICATION
Figure 1 shows a typical circuit for when hot line
switching is required. In this circuit the “hot” side of the line
is switched and the load connected to the cold or neutral side.
The load may be connected to either the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT of the
V
CC
R
in
1
2
3
FOD420
FOD4208
FOD4216
FOD4218
part, 2 mA for FOD420 and FOD4208, 1.3 mA for
FOD4216 and FOD4218. The 39
W
resistor and 0.01
mF
capacitor are for snubbing of the triac and may or may not
be necessary depending upon the particular triac and load
use.
360
W
FKPF12N80
39
W*
240 VAC
0.01
mF
LOAD
NEUTRAL
HOT
6
5
4
330
W
*For highly inductive loads (power factor < 0.5), change this value to 360
W.
Figure 1. Hot−Line Switching Application Circuit
240 VAC
R1
V
CC
R
in
1
2
3
FOD420
FOD4208
FOD4216
FOD4218
D1
6
5
4
360
W
R2
D2
LOAD
SCR
SCR
Figure 2. Inverse−Parallel SCR Driver Circuit
Suggested method of firing two, back−to−back SCR’s
with On Semiconductor triac driver. Diodes can be 1N4001;
resistors, R1 and R2, are optional 330
W.
NOTE: This optoisolator should not be used to drive a
load directly. It is intended to be a discrete triac
driver device only.
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MCU
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