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FDMS3572 N-Channel UltraFET Trench
®
MOSFET
February 2007
FDMS3572
N-Channel UltraFET Trench
®
MOSFET
80V, 22A, 16.5mΩ
Features
General Description
Max r
DS(on)
= 16.5mΩ at V
GS
= 10V, I
D
= 8.8A
Max r
DS(on)
= 24mΩ at V
GS
= 6V, I
D
= 8.4A
Typ Qg = 28nC at V
GS
= 10V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
tm
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
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