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BYW80-200G

Description
DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 8A Forward voltage drop (Vf): 1.25V @ 22A 200V, 8A
CategoryDiscrete semiconductor    diode   
File Size95KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BYW80-200G Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 8A Forward voltage drop (Vf): 1.25V @ 22A 200V, 8A

BYW80-200G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-220AC
package instructionLEAD FREE, PLASTIC, CASE 221B-04, TO-220B, 2 PIN
Contacts2
Manufacturer packaging code221B-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Description8A 200V Ultrafast Rect, BYW80-200G ON Semiconductor BYW80-200G Fast Rectifier Diode, 8A, 200V, 35ns, 2-Pin TO-220AC
Other featuresLOW LEAKAGE CURRENT
applicationULTRA FAST RECOVERY POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
BYW80-200
SWITCHMODEt
Power Rectifiers
This state−of−the−art device is designed for use in switching power
supplies, inverters and as free wheeling diodes.
Features
http://onsemi.com
Ultrafast 35 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO−220 Package
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Pb−Free Package is Available*
ULTRAFAST RECTIFIERS
8.0 AMPERES, 200 VOLTS
1
4
3
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz),
T
C
= 150°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
Operating Junction Temperature and
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FM
Values
200
Unit
V
4
MARKING
DIAGRAM
1
3
CASE 221B
TO−220B
PLASTIC
AY WWG
BYW80-200
KA
8.0
16
A
A
A
Y
WW
BYW80−200
G
KA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
I
FSM
100
A
T
J
, T
stg
−65
to +175
°C
ORDERING INFORMATION
Device
BYW80−200
BYW80−200G
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
June, 2008
Rev. 3
1
Publication Order Number:
BYW80/D

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