FQB47P06
—
P-Channel
QFET
®
MOSFET
FQB47P06
P-Channel
QFET
®
MOSFET
-60
V,
-47
A,
26
mΩ
Features
•
-47
A,
-60
V, R
DS(on)
=
26
mΩ (Max.) @ V
GS
=
.10
V,
I
D
=
-23.5
A
• Low Gate Charge (Typ.
84
nC)
• Low Crss (Typ.
320
pF)
• 100% Avalanche Tested
•
175°C Maximum Junction Temperature Rating
Description
This P-Channel enhancement mode power MOSFET is
produced using
ON
Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
S
D
G
G
S
D
2
-PAK
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB47P06TM-AM002
-60
-47
-33.2
-188
±
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
820
-47
16
-7.0
3.75
160
1.06
-55 to +175
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum
Pad
of 2-oz
Copper),
Max.
Thermal Resistance, Junction to Ambient (*1 in
2
Pad
of 2-oz
Copper),
Max.
FQB47P06TM-AM002
0.94
62.5
40
o
C/W
Unit
©2000
Semiconductor Components Industries, LLC.
September-2017,Rev.3
Publication Order Number:
FQB47P06TM-AM002/D
FQB47P06
—
P-Channel
QFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FQB47P06TM-AM002
Top Mark
FQB47P06
Package
D
2
-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
∆BV
DSS
/∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,
Referenced to 25°C
V
DS
= -60 V, V
GS
= 0 V
V
DS
= -48 V, T
C
= 150°C
V
GS
= -25 V, V
DS
= 0 V
V
GS
= 25 V, V
DS
= 0 V
-60
--
--
--
--
--
--
-0.06
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= -250
µA
V
GS
= -10 V, I
D
= -23.5 A
V
DS
= -30 V, I
D
= -23.5 A
-2.0
--
--
--
0.021
21
-4.0
0.026
--
V
Ω
S
Dynamic Characteristics
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
2800
1300
320
3600
1700
420
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -48 V, I
D
= -47 A,
V
GS
= -10 V
(Note 4)
V
DD
= -30 V, I
D
= -23.5 A,
R
G
= 25
Ω
(Note 4)
--
--
--
--
--
--
--
50
450
100
195
84
18
44
110
910
210
400
110
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= -47 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= -47 A,
dI
F
/ dt = 100 A/µs
--
--
--
--
--
--
--
--
130
0.55
-47
-188
-4.0
--
--
A
A
V
ns
µC
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L =
0.43
mH, I
AS
=
-47
A, V
DD
=
-25
V, R
G
= 25
Ω,
starting T
J
= 25°C.
3. I
SD
≤
-47 A, di/dt
≤
300 A/µs , V
DD
≤
BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
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2
FQB47P06
—
P-Channel
QFET
®
MOSFET
Typical Characteristics
10
2
-I
D
, Drain Current [A]
-I
D
, Drain Current [A]
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Top :
V
GS
10
2
10
1
10
1
175 C
o
10
0
25 C
o
-55 C
* Notes :
1. V
DS
= -30V
2. 250
µ
s Pulse Test
o
10
0
* Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25 C
-1
o
10
10
0
10
1
10
-1
2
4
6
8
10
-V
DS
, Drain-Source Voltage [V]
-V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.10
10
2
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
0.08
V
GS
= - 10V
-I
DR
, Reverse Drain Current [A]
0.06
10
1
0.04
V
GS
= - 20V
10
0
0.02
* Note : T
J
= 25 C
o
175 C
o
25 C
o
* Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
0.00
0
100
200
300
400
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-I
D
, Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
8000
7000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
-V
GS
, Gate-Source Voltage [V]
10
Capacitance [pF]
5000
4000
3000
2000
1000
0
-1
10
C
oss
C
iss
* Notes :
1. V
GS
= 0 V
V
DS
= -30V
8
V
DS
= -48V
2. f = 1 MHz
6
C
rss
4
2
* Note : I
D
= -47 A
10
0
10
1
0
0
10
20
30
40
50
60
70
80
90
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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3
FQB47P06
—
P-Channel
QFET
®
MOSFET
Typical Characteristics
(Continued)
1.2
2.5
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.5
1.0
1.0
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= -250
µ
A
0.5
* Notes :
1. V
GS
= -10 V
2. I
D
= -23.5 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
50
Operation in This Area
is Limited by R
DS(on)
Figure 8. On-Resistance Variation
vs. Temperature
10
3
-I
D
, Drain Current [A]
1 ms
10 ms
10
1
-I
D
, Drain Current [A]
10
2
100
µ
s
40
30
DC
20
10
0
* Notes :
o
1. T
C
= 25 C
3. Single Pulse
2. T
J
= 175 C
o
10
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
o
150
175
-V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Z
JC
(t), Thermal Response [
o
C/W]
10
0
D = 0 .5
* N o te s :
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
2 . D u t y F a c to r , D = t
1
/ t
2
1 . Z
θ
J C
( t) = 0 .9 4
o
C /W M a x .
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
( t)
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
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4
FQB47P06
—
P-Channel
QFET
®
MOSFET
50KΩ
50K
Ω
12V
200nF
200nF
300nF
300nF
Same Type
Same Ty
as DUT
DUT
V
DS
V
GS
Q
g
V
GS
DUT
DUT
Q
gs
Q
gd
I
G
= const.
Charge
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
V
GS
R
L
V
DD
t
d(on)
d( on)
t
on
t
r
t
d(off)
d( off
t
off
off
t
f
V
GS
10%
10%
DUT
V
DS
90%
Figure 13. Resistive Switching Test Circuit & Waveforms
V
DS
I
D
R
G
L
BV
DSS
DSS
1
---- L I
AS2
--------------------
--------------------
E
AS
=
2
BV
DSS
- V
DD
DSS
t
p
Tim
Time
V
DS
(t)
V
DD
DUT
DUT
V
DD
(t)
I
D
(t)
I
AS
V
GS
t
p
BV
DSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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