NCP330
Soft-Start Controlled Load
Switch
The NCP330 is a low Ron N−channel MOSFET controlled by a
soft−start sequence of 2 ms for mobile applications.
The very low R
DS(on)
allows system supplying or battery charging
up to DC 3A.The device is enable automatically if a Power Supply is
connected on Vin pin (active High) and maintained off if no Vin
(internal pull down).
Due to a current consumption optimization, leakage current is
drastically decreased from the battery connected to the device,
allowing long battery life.
Features
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MARKING
DIAGRAM
1
UDFN4
CASE 517CE
3A
M
3A M
•
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•
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1.8 V − 5.5 V Operating Range
30 mW N−MOSFET
DC Current Up to 3 A
Peak Current Up to 5 A
Built−in Soft−Start 2 ms
Reverse Voltage Protection
Active High with Integrated Bridge
Compliance to IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
ESD Ratings: Machine Model = B
Human Body Model = 3
mDFN4
1.2 x 1.6 mm
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
This is a Pb−Free Device
Mobile Phones
Tablets
Digital Cameras
GPS
Computers
Vbat
1
mF
IN
OUT
NCP330
1
mF
= Specific Device Code
= Date Code
PINOUT DIAGRAM
IN
PAD1
GND
OUT
EN
(Top View)
Typical Applications
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
EN
EN
GND
USB
Port
VBUS
D+
D−
GND
4
IN
CMIC
OUT
SBC Charger
SYSTEM
Supply
HS
Monitoring USB
Signal
Routing
Accessory
Detection and ID
I@C
Figure 1. Typical Application Circuit
©
Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
NCP330/D
NCP330
PIN FUNCTION DESCRIPTION
Pin Name
IN
GND
EN
OUT
PAD1
Pin
Number
1
2
3
4
Type
POWER
POWER
INPUT
OUTPUT
POWER
Description
Power−switch input voltage; connect a 1
mF
or greater ceramic capacitor from IN to GND as
close as possible to the IC.
Ground connection;
Enable input, logic high turns on power switch.
Power−switch output; connect a 1
mF
ceramic capacitor from OUT to GND as close as pos-
sible to the IC is recommended.
Exposed pad can be connected to GND plane for dissipation purpose or any other thermal
plane.
BLOCK DIAGRAM
IN: Pin1
1
mF
Gate driver and soft
start control
OUT: Pin 4
Battery
VREF
Charge
Pump
EN: 3
EN block
2
Figure 2. Block Diagram
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2
NCP330
MAXIMUM RATINGS
Rating
IN, OUT, EN, Pins:
From IN to OUT Pins: Input/Output
ESD Withstand Voltage (IEC 61000−4−2) (Note 1)
(IN and OUT when bypassed with 1.0
mF
capacitor minimum)
Human Body Model (HBM) ESD Rating are (Notes 2 and 3)
Machine Model (MM) ESD Rating are (Notes 2 and 3)
Latch−up protection (Note 4)
− Pins IN, OUT, EN
Maximum Junction Temperature Range
Storage Temperature Range
Moisture Sensitivity (Note 5)
Symbol
V
EN ,
V
IN ,
V
OUT
V
IN ,
V
OUT
ESD IEC
ESD HBM
ESD MM
LU
T
J
T
STG
MSL
Value
−0.3 to + 7.0
−7.0 to + 7.0
15 Air, 8 contact
4000
200
100
−40 to + 125
−40 to + 150
Level 1
°C
°C
Unit
V
V
kV
V
V
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Guaranteed by design.
2. According to JEDEC standard JESD22−A108.
3. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM)
±2.0
kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM)
±200
V per JEDEC standard: JESD22−A115 for all pins.
4. Latch up Current Maximum Rating:
±100
mA per JEDEC standard: JESD78 class II.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
IN
V
EN
T
A
T
J
C
IN
C
OUT
R
qJA
I
OUT
I peak
P
D
Parameter
Operational Power Supply
Enable Voltage
Ambient Temperature Range
Junction Temperature Range
Decoupling input capacitor
Decoupling output capacitor
Thermal Resistance Junction to Air
Maximum DC current
Maximum Peak current
Power Dissipation Rating (Note 7)
USB port per Hub
UDFN−4 package (Note 6)
UDFN−4 package
1 ms at 217 Hz (GSM calibration)
T
A
≤
25°C
T
A
= 85°C
UDFN−4 package
UDFN−4 package
0.58
0.225
Conditions
Min
1.8
0
− 40
− 40
1
1
170
3
5
25
25
Typ
Max
5.5
5.5
+ 85
+ 125
°C
°C
mF
mF
°C/W
A
A
W
Unit
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. The R
qJA
is dependent of the PCB heat dissipation.
7. The maximum power dissipation (P
D
) is given by the following formula:
P
D
+
T
JMAX
*
T
A
R
qJA
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NCP330
ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between −40°C to +85°C and T
J
up to + 125
°C
for
VIN
between
1.8 V to 5.5 V (Unless otherwise noted). Typical values are referenced to T
A
= + 25
°C
and
VIN
= 5 V.
Symbol
POWER SWITCH
R
DS(on)
T
R
T
F
T
on
Static drain−source on−state
resistance
Output rise time
Output fall time
Gate turn on
V
IN
= 3 V,
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 3 V
ENABLE INPUT EN
V
IH
V
IL
R
pd
R
pu
High−level input voltage
Low−level input voltage
En pull−down resistor
En pull−up resistor
1
1.5
1.15
0.85
V
V
MW
MW
T
J
= 25°C
−40°C < T
J
< 125°C
C
LOAD
= 1
mF,
R
LOAD
= 125
W
(Note 8)
C
LOAD
= 100
mF,
R
LOAD
= 40
W
(Note 8)
From Vin applied to V
OUT
=
10% of fully on
From Vin applied to V
OUT
=
10% of fully on (Note 9)
0.5
0.5
2
4
2
4
3
26
50
4
ms
ms
ms
mW
Parameter
Conditions
Min
Typ
Max
Unit
REVERSE−LEAKAGE PROTECTION
I
REV
Reverse−current protection
V
IN
= 0 V, V
out
= 4.2 V (part disable), T
J
= 25°C
0.15
1
mA
QUIESCENT CURRENT
Iq
Current consumption
No load
100
200
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Parameters are guaranteed for C
LOAD
and R
LOAD
connected to the OUT pin with respect to the ground.
9. Guaranteed by characterization.
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4
NCP330
TYPICAL CHARACTERISTICS
140
I
q
, SUPPLY CURRENT (mA)
120
T
A
= 25°C
100
80
60
40
20
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
IN
, INPUT VOLTAGE (V)
T
A
= −40°C
I
REV
, REVERSE CURRENT (mA)
T
A
= 85°C
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
1.5
2.0
2.5
3.0
T
A
= 25°C
3.5
4.0
4.5
5.0
5.5
V
OUT
, OUTPUT VOLTAGE (V)
T
A
= −40°C
T
A
= 85°C
Figure 3. Supply Current vs. Voltage
50
45
R
DS(on)
(mW)
R
DS(on)
(mW)
40
35
30
25
20
1.8
3.0
4.2
5.4
V
IN
, INPUT VOLTAGE (V)
I
OUT
= 3 A
I
OUT
= 2 A
I
OUT
= 1 A
I
OUT
= 0.5 A
50
45
40
35
30
25
20
Figure 4. Reverse Current vs. Output Voltage
I
OUT
= 2 A
I
OUT
= 3 A
I
OUT
= 0.5 A
I
OUT
= 1 A
1.8
3.0
4.2
5.4
V
IN
, INPUT VOLTAGE (V)
Figure 5. R
DS(on)
vs. V
IN
Voltage at 255C
50
45
R
DS(on)
(mW)
R
DS(on)
(mW)
40
35
30
25
20
1.8
3.0
I
OUT
= 1 A
4.2
I
OUT
= 0.5 A
20
5.4
0
I
OUT
= 2 A
I
OUT
= 3 A
25
50
45
40
35
30
Figure 6. R
DS(on)
vs. V
IN
Voltage at 855C
V
IN
= 1.8 V
V
IN
= 3.0 V
V
IN
= 5.5 V
V
IN
= 5.0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
IN
, INPUT VOLTAGE (V)
I
OUT
, OUTPUT CURRENT (A)
Figure 7. R
DS(on)
vs. V
IN
Voltage at −405C
Figure 8. R
DS(on)
vs. I
OUT
at 255C
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