DF10M datasheet, PDF - EEWORLD Datasheet

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DF10M: DescriptionReverse peak voltage: 1000V Average rectified current (Io): 1.5A Forward voltage drop (Vf): 1.1V @ 1A; CategoryDiscrete semiconductor diode; File Size299KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DF10M Overview

Reverse peak voltage: 1000V Average rectified current (Io): 1.5A Forward voltage drop (Vf): 1.1V @ 1A

DF10M Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	R-PDIP-T4
Manufacturer packaging code	646CL
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	1 week
Samacsys Confidence	3
Samacsys Status	Released
Samacsys PartID	831187
Samacsys Pin Count	4
Samacsys Part Category	Bridge Rectifier
Samacsys Package Category	Dual-In-Line Packages
Samacsys Footprint Name	DF10M
Samacsys Released Date	2019-05-30 10:55:23
Is Samacsys	N
Other features	LOW LEAKAGE, UL RECOGNIZED
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDIP-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	3.1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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