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RB160M-30TR

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 1A Forward voltage drop (Vf): 480mV @ 1A
CategoryDiscrete semiconductor    diode   
File Size517KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB160M-30TR Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 1A Forward voltage drop (Vf): 480mV @ 1A

RB160M-30TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-F2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionROHM - RB160M-30TR - DIODE, SCHOTTKY, PMDS
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.46 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Schottky barrier diode
RB160M-30
Applications
General rectification
Dimensions
(Unit : mm)
1.6±0.1
0.1±0.1
    0.05
Data
Sheet
Land
size figure
(Unit : mm)
1.2
3.5±0.2
3.5±0.12
2.6±0.1
Features
1) Small power mold type. (PMDU)
2) Low I
R.
3) High reliability
Construction
Silicon epitaxial planer
1
0.85
ec
N
ew om
m
D
es en
ig de
ns d
f
Structure
0.9±0.1
ROHM :
JEDEC :SOD-123
Manufacture Date
0.8±0.1
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.550.05
3.5±0.05
1.75±0.1
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
1.00.1
3.71±0.1
3.71
0.08
Absolute
maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz / 1cyc)
Junction temperature
Storage temperature
N
ot
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
30
30
1
30
125
40
to
125
Unit
V
V
A
A
C
C
(*1)Mounted on epoxy board. 180° Half sine wave
Electrical
characteristic
(Ta=25°C)
Parameter
R
Forward voltage
Reverse current
Symbol
V
F
1
V
F
2
I
R
1
I
R
2
Min.
-
-
-
-
Typ.
0.39
0.43
3.0
9.0
Max.
0.46
0.48
20
50
Unit
V
V
A
A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/3
or
PMDU
0.25±0.05
1.5MAX
0.
1
Conditions
I
F
=0.5A
I
F
=1.0A
V
R
=15V
V
R
=30V
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