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CL21B475KOQVPNE

Description
Accuracy: ±10% Capacitance: 4.7uF Rated voltage: 16V Temperature drift coefficient (dielectric material): X7R
CategoryPassive components    The patch capacitance   
File Size7MB,84 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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CL21B475KOQVPNE Overview

Accuracy: ±10% Capacitance: 4.7uF Rated voltage: 16V Temperature drift coefficient (dielectric material): X7R

CL21B475KOQVPNE Parametric

Parameter NameAttribute value
Accuracy±10%
Capacitance4.7uF
Rated voltage16V
Temperature drift coefficient (dielectric material)X7R
November 2015
on
Emis
s
arb
ion
1.86g
MLCC(02A104M) 1piece
C
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